Dynamic simulation method and device for carrier capture in irradiation semiconductor

Abstract

The invention discloses a dynamic simulation method and device for carrier capture in an irradiated semiconductor. The method comprises the following steps: acquiring a defect reaction event and a parameter list in the semiconductor required by annealing; based on the defect reflection event and the parameter list, performing calculation to obtain cascaded defect space distribution after annealing; based on the annealed cascade defect space distribution, the radius of an effective cascade where the defect to be simulated is located and the average concentration of defects in the cascade are obtained; the radius and the average concentration of the defect to be simulated and the parameter list serve as input, the improved rate equation based on the SRH theory is solved, and the dynamic behavior of defect capture carriers is obtained. According to the method, the influence of the spatial heterogeneity of cascade defects and the complex cascade local potential on carrier capture is considered, more real defect distribution is adopted, the cascade local potential is strictly solved, and the dynamic behavior of capturing electrons / holes by deep-energy-level defects is accurately simulated without dependence or with little dependence on adjustable parameters as far as possible.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method and device for simulating the dynamics of carrier capture in an irradiated semiconductor. Background technique [0002] Semiconductor devices serving in space or nuclear energy environments are often exposed to high-energy neutron irradiation, resulting in the dislocation of lattice atoms of semiconductor materials, resulting in a series of irregular collision cascades of different sizes, and dislocation defects within the cascade. (Especially deep level defects) trap electrons / holes (carriers) and enhance the recombination of electrons and holes, resulting in reduced performance or even permanent failure of semiconductor devices. In addition, when the defects in the cascade trap carriers, they will form a local potential energy barrier near the cascade, thereby preventing the further trapping of carriers by the defects, which will further change the electrical pr...

AI Technical Summary

Problems solved by technology

This method simulates the dynamic behavior of defects in metal core materials, not the dynamic behavior of defects in semiconductor materials. Due to the interaction between defects and carriers in semiconductors, defects will be charged, which makes the simulation of semiconductor defects more difficult than that of metals.

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