Method and apparatus for using semiconductor structure element
A technology for structural elements and semiconductors, which can be used in measuring devices, instruments, capacitors, etc., to solve problems such as shortening the service life of semiconductor structural elements
Pending Publication Date: 2022-07-08
ROBERT BOSCH GMBH
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As a result, a dielectric breakdown can occur at this electrode, which shortens the service life of the semiconductor component
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[0028] figure 1 A schematic representation of a semiconductor component 100 according to a first embodiment is shown. The semiconductor structural element 100 includes a first electrode 102 , a second electrode 104 and a dielectric layer 106 .
[0029] The dielectric layer 106 is arranged between the first electrode 102 and the second electrode 104 . In this example, the first electrode 102 and the second electrode 104 are arranged on mutually opposite sides of the dielectric layer 106 .
[0030] Defects D1 of the first defect type exist in the dielectric layer. In this example, these defects D1 are arranged in the first initial position. In this example, the first initial position is defined by the manufacturing process of the dielectric layer 106 . In particular, the defect D1 is arranged closer to the second electrode 104 than to the first electrode 102 .
[0031] figure 2 A schematic representation of a semiconductor component 100 according to a second embodiment is...
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Abstract
An apparatus and method for using a semiconductor structural element in which a dielectric layer is arranged between a first electrode and a second electrode of the semiconductor structural element, where a defect of a first defect type is present in the dielectric layer, where the defect of the first defect type is present in the dielectric layer. The method comprises the following steps: operating the semiconductor structure element at a first voltage having a first polarity between the first and second electrodes; determining whether a condition for a transition from operation of the semiconductor structural element at the first voltage to operation of the semiconductor structural element at a second voltage having a second polarity opposite to the first polarity is satisfied; if the condition is not satisfied, the operation of the semiconductor structural element at the first voltage is continued and otherwise the operation of the semiconductor structural element at the first voltage is terminated and the semiconductor structural element is operated at a second voltage between the first and second electrodes.
Description
technical field [0001] The present invention relates to a method and an apparatus for using semiconductor structural elements. Background technique [0002] Such semiconductor structural elements may contain defective dielectric layers. During the intended operation of the semiconductor component, defects can migrate in the dielectric layer between the electrodes of the semiconductor component. Defects can accumulate on one of the electrodes. As a result, dielectric breakdowns can occur at the electrodes, which shorten the service life of the semiconductor components. [0003] After the dielectric breakdown, the functionality of the semiconductor structural elements can be restored under defined conditions. This is described, for example, in J. Wang, C. Salm, E. Houwman, M. Nguyen and J. Schmitz, "Humidity and polarity influence on MIM PZT capacitor degradation and breakdown" (2016 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, 2016, pp....
Claims
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IPC IPC(8): G01R31/27G01R31/12H10N97/00
CPCG01R31/27G01R31/129H01L28/55H01L28/75
Inventor D·M·D·赖斯F·沙茨M·梅夫斯T·沙里
Owner ROBERT BOSCH GMBH