Buffer welding pad, manufacturing method of buffer welding pad, chip and manufacturing method of chip

Abstract

The invention discloses a buffer welding pad, a manufacturing method of the buffer welding pad, a chip and a manufacturing method of the chip. The buffer welding pad is used for a chip and comprises a first insulating layer, a second insulating layer, a first conductive layer and a second conductive layer, the second insulating layer is arranged above the first insulating layer, the second insulating layer is provided with a welding pad opening penetrating in the thickness direction, the first conductive layer is arranged between the first insulating layer and the second insulating layer, and the second conductive layer is arranged between the first insulating layer and the second insulating layer. The first conductive layer is provided with at least one buffer hole right below the welding pad hole, the second conductive layer is at least partially arranged in the welding pad hole, and the second conductive layer is conducted with the first conductive layer. According to the buffer welding pad provided by the embodiment of the invention, the first conductive layer is provided with at least one buffer hole right below the welding pad opening, so that when the buffer welding pad is connected with the metal wire in a binding manner, the pressure generated during binding is buffered, the risk of failure of the buffer welding pad is reduced, and the reliability of the buffer welding pad is improved.

Description

technical field [0001] The present invention relates to the technical field of chips, and in particular, to a buffer pad and a manufacturing method thereof, and a chip and a manufacturing method thereof. Background technique [0002] In the related art, after the wafer is cut into chips, the bonding process is usually used to connect the pads of the chip with external electronic components through metal wires. However, during the bonding process, if the bonding pressure is too small , the metal wire and the pad will not be bound firmly, which will affect the reliability of the chip application. If the bonding pressure between the metal wire and the pad is too large, the pad will crack, and even the chip will crack, which will also affect the reliability of the chip application. reliability. SUMMARY OF THE INVENTION [0003] The present invention aims to solve one of the above-mentioned technical problems in the prior art at least to a certain extent. Therefore, the first...

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Problems solved by technology

[0002] In related technologies, after the wafer is cut into chips, a bonding process is usually used to connect the pads of the chip with external electronic components through metal wires. However, during the bonding process, if the bonding pressure is too small If the bonding pressure between the metal wire and the pad is too high, it will cause cracks in the pad and even crack the chip, which will also affect the reliability of the chip application. reliability

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