Display panel and preparation method thereof
A display panel, one-sided technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of display panel afterimage brightness and decline, and achieve the effect of solving afterimage, improving reliability, and solving brightness decline.
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Embodiment 1
[0039] An embodiment of the present invention provides a display panel 100, please refer to figure 1 , figure 1 It is a schematic cross-sectional structure diagram of a display panel 100 according to an embodiment of the present invention. The display panel 100 includes a display area 101 and a non-display area 102 surrounding the display area 101 , and the display panel 100 includes a substrate layer 110 , a functional structure layer 120 and a slot hole 140 .
[0040] The substrate layer 110 extends from the display area 101 to the non-display area 102 , and includes a first flexible substrate 111 , a first buffer layer 112 , a second flexible substrate 113 and a second buffer layer 114 , and the first buffer layer 112 is disposed on the first flexible substrate 111 , the second flexible substrate 113 is disposed on the first buffer layer 112 , and the second buffer layer 114 is disposed on the second flexible substrate 113 .
[0041] The functional structure layer 120 is ...
Embodiment 2
[0076] The structure of the display panel of this embodiment is substantially the same as that of Embodiment 1. For details, please refer to Embodiment 1. The difference is that the driving transistor further includes a third gate layer 130 and a third via hole 163. Please refer to image 3 , image 3 This is a schematic cross-sectional structure diagram of the display panel provided in this embodiment. In this embodiment, the driving transistor further includes a third gate layer 130 and a third via hole 163, the third gate layer 130 is disposed between the second flexible substrate 113 and the second buffer layer 114, and the third via hole 163 extends from the side of the first gate insulating layer 122 away from the first flexible substrate 111 to the side of the third gate layer 130 away from the first flexible substrate 111. The three gate layers 130 are connected.
[0077] The third gate layer 130 of the driving transistor being located under the first active layer 12...
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