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Process for mfg. MgO film

A thin film preparation and process technology, applied in the field of MgO thin film preparation technology, can solve the problems of slow deposition speed, difficult to obtain, high toxicity of metal organic sources, etc., and achieves the effects of fast deposition speed, simple equipment and low cost

Inactive Publication Date: 2004-07-07
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages are: the deposition rate is slow, and the metal-organic sources used as raw materials are highly toxic, and must be carefully protected and operated
The sol-gel method basically uses magnesium metal alkoxide as a raw material, which is difficult to obtain in China
At present, there is no report on the preparation of MgO thin films by multi-arc ion plating.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] At room temperature, the multi-arc ion plating method is adopted, the equipment is MIP-8-800 ion coating machine, pure Mg is used as the cathode target, the anode is connected to the vacuum chamber, the cathode and the anode are respectively connected to the negative pole and the Positive electrode; clean the glass slide substrate with HF acid before loading the furnace, and pump the vacuum chamber to 8×10 -3 Pa, into H 2 to 4.0×10 -2 Pa, then enter Ar gas to 4Pa, use SP20D36T type DC bias power supply, apply DC bias voltage 500V, use glow discharge to bombard the surface of the substrate, and the bombardment time is 3min; use O 2 As the reaction gas, Ar gas is used as the protective gas, the flow rate of oxygen is 160Sccm, and the end of the copper air tube of Ar gas is made into a circle, which is slightly larger than the Mg target, and it is close to the Mg target, while O 2 The mouth of the gas guide tube is close to the substrate, and the arc plating is struck by...

Embodiment 2

[0021] At room temperature, the multi-arc ion plating method is adopted, and the equipment is the same as above; pure Mg is used as the cathode target, the anode is connected to the vacuum chamber, and the cathode and anode are respectively connected to the negative and positive electrodes of the low-voltage, high-current DC power supply; Clean the monocrystalline silicon substrate, and pump the vacuum chamber to 8×10 -3 Pa, into H 2 to 5.5×10 -2 Pa, then introduce Ar gas to 6.2Pa, use SP20D36T DC bias power supply to add DC bias voltage 700V, use glow discharge to bombard the surface of the substrate, and the bombardment time is 5min; use O 2 As the reaction gas, Ar gas is used as the protective gas, the oxygen flow rate is 230Sccm, and the end of the Ar gas copper air tube is made into a circle, which is slightly larger than the Mg target, and it is close to the Mg target, while the O 2 The mouth of the air guide tube is close to the substrate, and the arc plating is struc...

Embodiment 3

[0023] The multi-arc ion plating method is adopted, and the equipment is the same as above; pure Mg is used as the cathode target, the anode is connected to the vacuum chamber, and the cathode and anode are respectively connected to the negative and positive electrodes of the low-voltage, high-current DC power supply; the Si is cleaned with HF acid before the furnace is installed ( 100) pieces of substrate, after the furnace is installed, the vacuum chamber is pumped to 2×10 -2 Pa, after the substrate is heated to 100°C, H 2 to 6.5×10 -2 Pa, then inject Ar gas to 7.0Pa, apply a pulse bias voltage of 700V with a duty cycle of 40% with SP20U155T pulse bias power supply, and use glow discharge to bombard the surface of the substrate for 4 minutes; use O 2 As the reaction gas, Ar gas is used as the protective gas, the oxygen flow rate is 270Sccm, and the end of the copper air guide tube of Ar gas is made into a circle, which is slightly larger than the Mg target, and it is close ...

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Abstract

A process for preparing MgO film is characterized by use of multi-arc ion plating method and pure Mg as cathode target, and includes connecting anode to vacuum chamber, connecting cathode and anode respectively to negative and positive electrodes of low-voltage high-current DC power supply, washing matrix with hydrofluoric acid, loading in furnace, vacuumizing, filling argon gas and H2, glow discharge to bombard matrix for 3-5 min, and generating arcs by short circuit method for plating. Its advantages are high speed and compactness and no environmental pollution.

Description

technical field [0001] The invention relates to MgO thin films, in particular to a preparation process for MgO thin films. Background technique [0002] In the prior art, in color plasma displays, especially AC color plasma displays, MgO thin films have attracted widespread interest as a protective dielectric layer and as a stable barrier layer for high-temperature superconducting thin films and ferroelectric thin films. At present, the main preparation methods of MgO thin films are vacuum evaporation method, chemical vapor deposition method and sol-gel method. Among them, the vacuum evaporation method mostly uses electron beam evaporation technology and laser pulse deposition technology, that is, electron beam and laser are respectively used to focus on the surface of pure MgO target, so that MgO is melted and evaporated. Although these two methods can prepare high-purity MgO thin films, due to the high cost of using pure MgO targets, and if the electron beam evaporation m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/24
Inventor 闻立时卢春燕孙超王铁钢黄荣芳宫骏谭明辉肖金泉王冰裴志亮
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI