Chromium oxide coating preparing process

A preparation process and chromium oxide technology, which is applied in metal material coating process, coating, ion implantation plating and other directions, can solve the problems of easy deformation and cracking of the target surface, the operating power cannot be too high, and the substrate is difficult to deposit locally. The effect of fast film formation, low cost, and fast deposition

Inactive Publication Date: 2004-06-23
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Sputtering multi-purpose target Cr 2 o 3 , the cost is high, and the result is mostly an amorphous oxygen-deficient film. After heat treatment, some Cr 2 o 3 The crystallization of the film affects the performance of the film, and the sputtering method itself also has its shortcomings: (1) a concave erosion ring occurs on the target surface, so that the utilization of the entire target is only 50%; (2) the target surface is easily deformed and cracked, Therefore, the operating power cannot be so high that the sputtering rate is limited
CVD is the process of generating a solid deposition layer on a solid surface by thermal decomposition, thermal synthesis or chemical transport of gaseous substances. Using the CVD method, Cr(C 5 h 7 o 2 ) 3 and Cr(CO) 6 , a smooth Cr 2 o 3 Thin film, but it also has disadvantages: it needs to react at high temperature, so the types of substrate materials that can be used for coating are limited, the substrate is difficult to deposit locally, and the source of the reaction and the residual gas after the reaction have certain toxicity, etc. Must be guarded and handled with care
At present, there is no report on the preparation of chromium oxide coating by arc ion plating

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The equipment used is the MIP-8-800 ion coating machine, using pure chromium as the cathode target, the anode is connected to the vacuum chamber, the cathode and the anode are respectively connected to the negative pole and positive pole of the low-voltage, high-current DC power supply, the current is 50A, and the voltage is 20V; the size of the substrate is: 15mm×10mm×2mm, the material is 18-8 stainless steel, the substrate is ground and polished by metallographic sandpaper, cleaned with ultrasonic waves in acetone for 15min, dried, and placed on the sample stage in the vacuum deposition chamber. The distance between the substrate and the target is about 240mm, and the vacuum degree reaches 8×10 -3 Pa, first pass into the Ar gas, the pressure is 7×10 -2 Pa, add a high bias voltage of -1000V before coating. a : 50A, arc voltage: 20V, after the substrate is bombarded, oxygen is introduced, only the oxygen flow rate is changed: 60~190sccm, working pressure: 6.0×10 -1 Pa...

Embodiment 2

[0032] The difference from Example 1 is:

[0033] The current of the DC power supply is 100A, and the voltage is 40V; the size of the substrate is: 15mm×10mm×2mm, and the material is 18-8 stainless steel. On the sample stage in the vacuum deposition chamber, the distance between the substrate and the target is about 150 mm. After the furnace is installed, the vacuum chamber is evacuated to a vacuum degree of 6.0×10 -3 Pa, through Ar gas, the pressure is 5×10 -2 Pa, add a high bias voltage of -700V before coating, and the high bias voltage is a pulse bias voltage; utilize glow discharge to bombard the surface of the substrate for 5min, arc current I a : 50A, arc voltage: 20V; after the bombardment of the substrate, oxygen is introduced, the oxygen flow rate: 130sccm, the working pressure: 4.0×10 -1 Pa, only changing the pulse bias voltage: 0 ~ -400V, the duty ratio is 20%, and the deposition time is 30min.

[0034] Such as figure 2 As shown, S represents the matrix, and th...

Embodiment 3

[0036] The difference from Example 1 is:

[0037] The current of the DC power supply is 75A, and the voltage is 30V; the size of the substrate is: 15mm×10mm×2mm, and the material is 18-8 stainless steel. On the sample stage in the vacuum deposition chamber, the distance between the substrate and the target is about 280mm. After the furnace is installed, the vacuum chamber is evacuated to a vacuum degree of 6.0×10 -3 Pa, the substrate is heated to 150°C and Ar gas is introduced, the pressure is 6×10 -2 Pa, add a high bias voltage of -800V before coating, the high bias voltage is a pulse bias voltage; use glow discharge to bombard the surface of the substrate for 3min, only change the arc current I a : 30 ~ 60A, arc voltage: 20 ~ 40V; after the bombardment of the substrate, oxygen is introduced, oxygen flow rate: 130sccm, working pressure: 8.0×10 -1 Pa, the pulse bias voltage is -300V, the duty cycle is 20%, and the deposition time is 30min.

[0038] Such as image 3 As show...

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Abstract

The chromium oxide coating preparing process is one ion plating process with pure chromium cathode target, anode connected to the vacuum chamber, low voltage and great current power supply of 15-40 V voltage and 10-100 A current, O2 as reaction gas, and Ar as protective gas. Before plating, high bias voltage of -700 to -1000 V is applied for glow discharge to bombard the base body surface for 2-5 min. The arc current Ia is 30-60 A and arc voltage is 15-40 V; and after bombardment, oxygen of flow rate 60-270 sccm at pressure 0.4-0.8 Pa is introduced, while a pulse bias Vp of from 0 to -500 V and duty ratio 0-40 % is applied. The said chromium oxide coating preparing process is low in cost, environment friendly, fast in deposition speed, low deposition temperature and high compactness.

Description

technical field [0001] The invention relates to a chromium oxide coating, in particular to a preparation process for a chromium oxide coating. Background technique [0002] Among all minerals and oxides, Cr 2 o 3 It is one of the hardest materials. It has excellent chemical stability, high temperature resistance, small friction coefficient, etc., and can be used as a barrier layer for microelectronic devices and a protective layer for wear devices. In addition, Cr 2 o 3 Thin films with high solar energy absorption performance and poor heat dissipation have also received extensive attention as selective absorbing layers for solar absorbers. Previous studies have shown that Cr 2 o 3 The film has good wear resistance and low friction coefficient, but the hardness is lower than that of Cr 2 o 3 Block hardness value. [0003] In recent years, people such as Bhushan (Bhushan) of Columbus (capital of Ohio, U.S.) have published in the literature: [Tribological studies of c...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/38
Inventor 孙超纪爱玲闻立时王启民汪伟汪爱英郑静地肖金泉曹鸿涛柯培玲
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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