Light-emitting device

A technology of light-emitting elements and active layers, which is applied to electrical components, laser components, lasers, etc., can solve problems such as poor surface conditions, and achieve the effect of improving crystallinity

Inactive Publication Date: 2004-11-17
NICHIA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, in an active layer containing indium (In) in an amount required to obtain an emission wavelength corresponding to 590 nm, the surface state becomes extremely poor, and there is a problem that a semiconductor layer formed on the active layer cannot be formed with good crystallinity.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0047] figure 1 This is a model structure showing Embodiment 1 in which the present invention is applied to a light emitting diode. In the light-emitting diode of the first embodiment, a buffer layer 102 , an undoped GaN layer 103 , an n-type contact layer 104 , an n-type cladding layer 105 , an active layer 106 , and a p-type cladding layer 107 are sequentially stacked on a substrate 101 . , and the p-type contact layer 108, and on the n-type contact layer 104 and the p-type contact layer 108, respectively, an n-electrode 111 and a p-electrode 112 are formed.

[0048] The substrate 101 is used to grow a desired nitride semiconductor layer (In x Al y Ga 1-x-y N, x≥0, y≥0, x+y≤1) can be appropriately selected. The buffer layer 102 is to relieve the substrate 101 and the nitride semiconductor (In x Al y Ga 1-x-y N, x≧0, y≧0, x+y≦1) is a layer formed due to an incorrect lattice constant. The undoped GaN layer 103 is a layer formed to improve the crystallinity of the n-typ...

Embodiment approach 2

[0084] Next, a light-emitting diode according to Embodiment 2 of the present invention will be described.

[0085] As described above, the present invention is very suitable for a multiple quantum well structure because the crystallinity of the layers formed above the well layer 12 and the first barrier layer 13 can be improved.

[0086] That is, the light-emitting element according to Embodiment 2 of the present invention adopts the Figure 5 The shown active layer 106c of the multiple quantum well structure has the same structure as that of the first embodiment except that the light-emitting diode is constituted instead of the active layer 106 of the light-emitting element of the first embodiment.

[0087] In the light-emitting element of the second embodiment, as Figure 5 As shown, in the active layer 106c of the multiple quantum well structure, the second barrier layer 11, the well layer 12, and the first barrier layer 13 are sequentially and repeatedly formed. In this ca...

Embodiment approach 3

[0096] Hereinafter, a light-emitting element according to Embodiment 3 of the present invention in which the present invention is applied to a laser element will be described.

[0097] Figure 8 It is a schematic diagram showing the structure of a nitride semiconductor laser element as a light-emitting element according to the third embodiment.

[0098] In the nitride semiconductor laser device of the third embodiment, a buffer layer 202 , an n-type contact layer 203 , an n-type cladding layer 204 , an n-type light guide layer 205 , an active layer 206 , and a p-type light guide layer are sequentially stacked on a substrate 201 . layer 207, p-type cladding layer 208, p-type contact layer 209, and n-electrode 211 and p-electrode 212 are formed on n-type cladding layer 204 and p-type cladding layer 208, respectively.

[0099] The structure of the substrate 201 , the buffer layer 202 , the n-type contact layer 203 , and the n-type cladding layer 204 is the same as that of the fi...

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Abstract

A light-emitting device having an active layer made of a nitride semiconductor containing In, especially a light-emitting device emitting a light of long wavelength (above 550 nm) and having an improved output power, wherein the active layer is formed between an n-type semiconductor layer and a p-type semiconductor layer and includes a well layer made of Inx1Ga1-x1N (x1>0) containing In and a first barrier layer formed on the well layer and made of Aly2Ga1-y2N (y2>0) containing Al.

Description

technical field [0001] The present invention relates to a semiconductor having a nitride layer (such as In x Al y Ga 1-x-y N, 0≤x, 0≤y, x+y≤1) light-emitting element. Background technique [0002] In recent years, light-emitting elements including a nitride semiconductor layer represented by blue LEDs, LDs, and the like have been attracting attention. Elements made of nitride semiconductors are expected to be applied not only to light-emitting elements but also to various elements because of their high melting point, relatively high heat resistance, and small temperature dependence. [0003] In addition, LEDs are expected to be used as light-emitting sources for signals because of their extremely superior characteristics of low power consumption and long life, and have considerable effects in saving power consumption and reducing maintenance frequency. It is expected that LEDs with high brightness and sufficient visibility can be developed even outdoors. In addition, th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/12H01L33/32H01S5/323H01S5/343
CPCH01L33/32H01L33/06H01S5/34333B82Y20/00
Inventor 森田大介山田元量
Owner NICHIA CORP
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