35results about How to "High luminous output" patented technology

According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.

Provided is a group-III nitride semiconductor light-emitting device which has a high level of crystallinity and superior internal quantum efficiency and which is capable of enabling acquisition of high level light emission output, and a manufacturing method thereof, and a lamp. An AlN seed layer composed of a group-III nitride based compound is laminated on a substrate 11, and on this AlN seed layer, there are sequentially laminated each layer of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer respectively composed of a group-III nitride semiconductor, wherein the full width at half-maximum of the X-ray rocking curve of the (0002) plane of the p-type semiconductor layer 16 is 60 arcsec or less, and the full width at half-maximum of the X-ray rocking curve of the (10-10) plane is 250 arcsec or less.

A light-emitting diode 10A has a light-emitting element 11a fixed to a leadframe 30 with a conductive adhesive material 20, the light-emitting element 11a having a semiconductor layer 9 including a light-emitting layer 16 laid on a first surface 12a of a translucent substrate 12, a second surface 12b thereof facing away from the first surface 12a being used as a light emission observation surface. A side surface of the semiconductor layer 9 is an inclined surface inclined relative to the first surface 12a, and an angle θ between a normal “a” to the inclined surface and a crystal surface on which the light-emitting layer 16 grows is equal to an angle at which light emitted by the light-emitting layer 16 is totally reflected toward the translucent substrate 12.

A pn junction type Group III nitride semiconductor light-emitting device 10 (11) of the present invention has a light-emitting layer 2 of multiple quantum well structure in which well layers 22 and barrier layers 21 including Group III nitride semiconductors are alternately stacked periodically between an n-type clad layer 105 and a p-type clad layer 107 which are formed on a crystal substrate and which include Group III nitride semiconductors, in which one end layer 21m of the light-emitting layer 2 is closest to and opposed to the n-type clad layer, and the other end layer 21n of the light-emitting layer 2 is closest to and opposed to the p-type clad layer, both the one and the other end layers are barrier layers, and the other end layer 21n is thicker than the barrier layer of the one end layer.

An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device with low driving voltage and high light emission output, which has a positive electrode comprising a transparent electrically conducting layer put into direct contact with a p-type semiconductor layer.

The inventive gallium nitride-based compound semiconductor light-emitting device comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer which are formed in this order on a substrate, wherein each layer comprises a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and on the p-type semiconductor layer, respectively, the positive electrode is at least partially formed of a transparent electrically conducting film, the transparent electrically conducting film is at least partially in contact with the p-type semiconductor layer, a semiconductor metal mixed layer containing a Group III metal component is present on the semiconductor side surface of the transparent electrically conducting film, and the thickness of the semiconductor metal mixed layer is from 0.1 to 10 nm.

A light-emitting device having an active layer made of a nitride semiconductor containing In, especially a light-emitting device emitting a light of long wavelength (above 550 nm) and having an improved output power, wherein the active layer is formed between an n-type semiconductor layer and a p-type semiconductor layer and includes a well layer made of Inx1Ga1-x1N (x1>0) containing In and a first barrier layer formed on the well layer and made of Aly2Ga1-y2N (y2>0) containing Al.

A light emitting element according to an embodiment of the invention includes a semiconductor substrate, a light emitting part having a first conductivity type first cladding layer; a second conductivity type second cladding layer different from the first cladding layer in the conductivity type and an active layer sandwiched between the first cladding layer and the second cladding layer, a reflecting part for reflecting a light emitted from the active layer, disposed between the semiconductor substrate and the light emitting part so as to have a thickness of 1.7 μm to 8.0 μm and an electric current dispersing layer disposed on a side of the light emitting part opposite to the reflecting part, having a uneven part on the surface thereof, wherein the reflecting part is formed so as to have at least three pair layers formed of a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, the first semiconductor layer has a thickness T_A defined by the formula (1), if peak wavelength of the light emitted from the active layer is λ_P, refractive index of the first semiconductor layer is n_A, refractive index of the second semiconductor layer is n_B, refractive index of the first cladding layer is n_In, and incident angle of light to the second semiconductor layer is θ, the second semiconductor layer has a thickness T_B defined by the formula (2), and a plurality of pair layers of the reflecting part have a different thickness to each other according as values of the incident angle of light θ in the formulae (1) and (2) are different with respect to each pair layer, and at least one pair layer includes the first semiconductor layer and the second semiconductor layer defined by that the incident angle of light θ is not less than 50 degrees.

A self-supported nitride semiconductor substrate of 10 mm or more in diameter having an X-ray diffraction half width of 500 seconds or less in at least one of a {20-24} diffraction plane and a {11-24} diffraction plane.

A light-emitting element layer 10 includes: an n-type contact layer 11; a first light-emitting layer 12; a tunnel junction layer 13; a second light-emitting layer 14; and a p-type contact layer 15 laminated in this order. The first light-emitting layer 12 and the second light-emitting layer 14 emit light of the same wavelength. The tunnel junction layer 13 includes: a p-type tunnel layer 131 made of AlGaAs containing p-type impurities (C); and an n-type tunnel layer 133 made of GaInP containing n-type impurities (Te). A highly n-type impurities-doped layer 132 having a higher concentration of n-type impurities than the n-type tunnel layer 133 is arranged between the p-type tunnel layer 131 and the n-type tunnel layer 133.

A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at at least four corners of the outer peripheral region of the n-side semiconductor layer.

In a light-emitting element array using light emitting thyristors, a light emitting output of each light emitting thyristor can be increased and a variation in the light emitting output can be suppressed. On a substrate, a thyristor having a mesa structure including a cathode layer, a gate layer, a gate layer, and an anode layer is formed. A contact layer is formed on the anode layer. A current constriction region is formed by a region in which the anode layer is in contact with the contact layer. A minimum distance from the current constriction region to a side surface of the mesa structure is greater than or equal to 4 μm.