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Anodization apparatus, anodization system, and apparatus and method for treating matrix thereof

A technology of anodizing and anodizing silicon, which is applied in the direction of chemical instruments and methods, anodizing, and from chemically reactive gases, etc. It can solve problems such as poor quality, reduced output and productivity, and uneven porous silicon.

Inactive Publication Date: 2005-03-23
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will make the porous silicon non-uniform, resulting in poorer quality, lower yield and productivity

Method used

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  • Anodization apparatus, anodization system, and apparatus and method for treating matrix thereof
  • Anodization apparatus, anodization system, and apparatus and method for treating matrix thereof
  • Anodization apparatus, anodization system, and apparatus and method for treating matrix thereof

Examples

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no. 1 example

[0101] 2-9 schematically show the construction of an anodizing apparatus according to a first embodiment of the present invention. Figure 10 is a plan view showing a part of the anodizing apparatus 100 shown in FIGS. 2-9.

[0102] In the anodizing apparatus 100 according to the first embodiment of the present invention, a series of process steps including anodizing, rinsing, and drying may be performed. According to this anodizing apparatus 100, it may not be necessary to transfer the substrate between parts that are anodized, rinsed and dried separately. Thus, for example, 1) the productivity is high, 2) the substrate can be prevented from falling, and 3) the anodizing apparatus can be made compact.

[0103] In the anodizing apparatus 100, a series of process steps including anodizing, rinsing, and drying are performed while horizontally holding a substrate to be processed. Thus, for example, when a substrate is received from an automatic transfer machine that grips and co...

no. 2 example

[0152] An automatic anodizing apparatus according to a second embodiment of the present invention will be described below. The automatic anodizing apparatus of the present embodiment has the anodizing apparatus 100 according to the first embodiment as an apparatus for performing anodization, and an independent post-processing apparatus as a washing and drying apparatus.

[0153] Figure 13-16 The configuration of a post-processing device according to a second embodiment of the present invention is schematically shown. Fig. 17 is a plan view schematically showing the structure of an anodizing system according to a second embodiment of the present invention.

[0154] The following will first refer to Figure 13-16 The configuration of the post-processing device 400 according to the preferred embodiment of the present invention is described. This post-processing apparatus 400 schematically has the same configuration as the anodizing apparatus 100 of the first embodiment except...

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Abstract

This invention is to reduce the influence of a gas generated by an anodizing reaction. A silicon substrate ( 101 ) to be processed is horizontally held. A negative electrode ( 129 ) is arranged on the upper side of the silicon substrate ( 101 ), and a positive electrode ( 114 ) is brought into contact with the lower surface of the silicon substrate ( 101 ). The space between the negative electrode ( 129 ) and the silicon substrate ( 101 ) is filled with an HF solution ( 132 ). The negative electrode ( 129 ) has a number of degassing holes ( 130 ) to prevent a gas generated by the anodizing reaction from staying on the lower side of the negative electrode ( 129 ).

Description

technical field [0001] The invention relates to an anodizing device, an anodizing system, a substrate processing device and method, and a substrate manufacturing method. Background technique [0002] Porous silicon was discovered by A.Uhlir and D.R.Turner when they studied the electrolytic polishing of single crystal silicon biased with a positive potential in hydrofluoric acid. [0003] Later, in order to take advantage of the excellent reactivity of porous silicon, the effect of porous silicon on the element isolation process method in the manufacture of silicon integrated circuits was examined, and a full isolation technology using a porous silicon oxide film (FIFOS: By Porous Silicon Oxide full isolation) (K. Imai, Solid State Electron 24, 159, 1981). [0004] Recently, a direct bonding application technology has been developed. In this technology, a silicon crystal epitaxial layer is grown on a porous silicon substrate, and the substrate is combined with an amorphous s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304C25D11/32C25F3/12H01L21/00H01L21/02
CPCH01L21/67017H01L21/30
Inventor 松村聪山方宪二
Owner CANON KK