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ITO sputtering target

A technology of sputtering target and sputtering surface, which is applied in the field of ITO sputtering target, and can solve problems such as inability to suppress arc

Inactive Publication Date: 2005-06-22
MITSUI MINING & SMELTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to achieve the purpose of suppressing the peeling of the plated material generated on the target surface, the initial arc cannot be suppressed.

Method used

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  • ITO sputtering target
  • ITO sputtering target

Examples

Experimental program
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Effect test

Embodiment 1

[0039] Will In 2 o 3 Powder and SnO 2 powder with In 2 o 3 :SnO 2 = 90:10% by mass, mixed with an ITO sintered body by a common method, and used as a target. This target material is cut into the size of φ 4 inches, then grinds the surface (sputtering surface) that is used for sputtering and the surface (adhesive surface) that are used for bonding with the plane grinder disc these two sides, it is adjusted to 6 Micron thickness, followed by grinding the sputtered surface with a diamond grinder.

[0040] The target is set on the anode side of the sputtering device, another ITO target is set on the cathode side, and sputtering is carried out under the following conditions, and the sputtering surface of the target on the anode side is plated to form a film thickness of 135000 angstroms (1.35 microns ) of the ITO film.

[0041] The sputtering conditions and sputtering methods at this time are: DC magnetron sputtering machine, process gas: Ar, process pressure: 3 mTorr, oxyge...

Embodiment 2

[0044] Except making the film thickness of the ITO film that forms on the sputtering surface of target material be 27000 angstroms (2.7 micron, all the other make target according to the method identical with embodiment 1. Measure ITO film with the method identical with embodiment 1 Surface roughness before and after plating formation. The results are shown in Table 1.

Embodiment 3

[0046] In addition to roughly grinding the two sides of the sputtering surface and the bonding surface of the target with a flat grinding disc, after adjusting it to a thickness of 6 mm, sandblasting was performed with aluminum beads instead of grinding the sputtering surface with a diamond grinder, and The target was prepared in the same manner as in Example 1 except that the thickness of the ITO film formed by plating on the sputtering surface of the target was 27000 Angstroms (2.7 microns). The surface roughness before and after the ITO film plating formation was measured by the same method as in Example 1. The results are shown in Table 1.

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Abstract

PURPOSE: To provide an ITO (indium-tin-oxide) sputtering target in which an ITO film having a film thickness of >1 μm is deposited on the sputtering face of a target produced through a mechanical grinding process, and consisting of an oxide containing at least either indium oxide or tin oxide (ITO). CONSTITUTION: A sputtering target which has effectively reduced occurrence of an initial arc, and has high initial stability can be obtained, and, by performing sputtering using this sputtering target, productivity is improved, and the deposition of a thin film with high performance can efficiently be performed. Further, a finish grinding process can be eliminated, so that the grinding stage can be simplified, and the cost therefor can be reduced.

Description

technical field [0001] The present invention relates to ITO sputtering targets. Background technique [0002] Heretofore, the sputtering method is known as one of the thin film forming methods. The so-called sputtering method usually uses an inert gas to impact the target in a plasma state under reduced pressure, and the molecules and atoms flying out of the target are deposited on the substrate by this energy, thereby forming a thin film on the substrate. It can be used industrially because it is used in a large area and a high-performance film is easily obtained. [0003] In recent years, known sputtering methods include a reactive sputtering method in which sputtering is performed in a reactive gas, and a magnetron sputtering method in which a magnet is placed inside a target to form a thin film at high speed. [0004] Among the thin films formed by these sputtering methods, indium oxide (In 2 o 3 ) and tin oxide (SnO 2 ) at least one oxide (hereinafter referred to a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/457C23C14/08C23C14/34
CPCC04B35/457C23C14/086C23C14/3414
Inventor 尾野直纪
Owner MITSUI MINING & SMELTING CO LTD
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