Testing mask structure

Abstract

A structure of test mask consists of at least one array pattern region in fixed ratio to the final product. The array pattern region has the first pattern density according to the fixed ratio and the second pattern density in mask test region. The structure regulates areas of array pattern region and mask test region according to the first and the second pattern densities for obtaining the required pattern density.

Description

technical field [0001] The present invention relates to a semiconductor manufacturing process, and more specifically to a test mask structure for improving etching precision. Background technique [0002] In the manufacturing process of semiconductor devices, the formation of various components of integrated circuits requires extensive use of mask etching techniques. However, in the steps of pattern setting, mask making, exposure, development, imaging, and final etching, due to factors such as material and actual operation errors, it is impossible to achieve the predetermined critical dimension in each step. 100% maintenance. For example, taking a pattern with a size of 180nm as an example, the line width of the initial design layout is set to be 180nm. However, in order to avoid possible errors in the future, when making the mask, the line width is maintained at the part with high pattern density 180nm, and in the medium-density part, the line width critical dimension of ...

AI Technical Summary

Problems solved by technology

Due to the difference in pattern density, the margin adjustment made by the test mask is inaccurate, resulting in the degradation of the profile of the final etched product

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