Tech of sintering Nb2O5-TiO2 system deelectric ceramic

Abstract

A sintering process for dielectric Nb2O5-TiO2 ceramic includes such steps as proportionally mixing Nb2O5 powder with TiO2 powder, heating at 1250 deg. C for 18 hr, proportionally adding PVC powder, granulating, die pressing, sintering at 1350-1380 deg. C for 2-15 hr and cooling. It has high dielectric coefficient.

Description

Technical field [0001] The invention belongs to the field of dielectric ceramic preparation. Background technique [0002] With the development of electronic technology, the size of microelectronic circuits has been made smaller and smaller, so the requirements for the performance of tiny components have become higher and higher. For capacitive components, the dielectric properties limit their minimization. Modern electronic materials will no longer be able to meet the performance requirements of capacitor components in microelectronic circuits. For example: the capacitor dielectric layer in the Dynamic Random Access Memory (DRAM) is made of SiO 2 Or Si 3 N 4 Manufactured, their relative permittivity ε under conventional measurement conditions (1MHz frequency and 25℃) r Respectively 3.8 and 6.0, this is far from meeting the current increasing demand for storage capacity. To develop and produce DRAM with a storage capacity of more than 1G, it has become an urgent task to find a ne...

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Problems solved by technology

The pre-sintering and sintering temperature is too high, the holding time is too long, the dielectric coefficient is relatively low, and only the sintering process with a doping concentration of 5% mol is studied, and there are also long preparation cycles, low efficiency, large energy consumption, and the dielectric coefficient Small size, few options for industrial production, unfavorable for the practical application of industrial production