Tech of sintering Nb2O5-TiO2 system deelectric ceramic

A technology of nb2o5-tio2 and dielectric ceramics, which is applied in the field of dielectric ceramics preparation, can solve the problems of long holding time, low dielectric coefficient, and long preparation cycle, etc., and achieve the goals of increased production efficiency, reduced energy consumption, and shortened preparation cycle Effect

Inactive Publication Date: 2006-10-25
BEIJING UNIV OF TECH
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AI Technical Summary

Problems solved by technology

The pre-sintering and sintering temperature is too high, the holding time is too long, the dielectric coefficient is relatively low, and only the sintering process with a doping concentration of 5% mol is studied, and there are also long preparation cycles, low efficiency, large energy consumption, and the dielectric coefficient Small size, few options for industrial production, unfavorable for the practical application of industrial production

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1: The Nb 2 O 5 And TiO 2 Powder according to the proportion (Nb 2 O 5 ) 0.95 (TiO 2 ) 0.05 Batching, mechanical ball milling for 12 hours, drying; heating up to 1250°C at a rate of 200°C / hour for pre-sintering and keeping the temperature for 18 hours. The pre-fired powder is mechanically ball milled for 12 hours and dried; the pre-fired powder will be mixed with 3% mass concentration of polyvinyl alcohol (PVA) glue for granulation, where the weight of the glue is the powder 6% of the total weight; under a pressure of 200 MPa, press into a green sheet; heat the green body at a rate of 100°C / hour to 1380°C for sintering, keep it for 2 hours, and then reduce to room temperature at a rate of 150°C / hour, Finally sintered into a dense flake ceramic body; gold electrodes were sprayed on the upper and lower surfaces of the ceramic sheet, and the dielectric properties were measured with HP4284ALCR precision measuring instrument under conventional measurement conditions (1MH...

Embodiment 2

[0021] Embodiment 2: Nb 2 O 5 And TiO 2 Powder according to the proportion (Nb 2 O 5 )0.92(TiO 2 ) 0.08 for batching, mechanical ball milling for 12 hours, drying; heating up to 1250°C at a rate of 200°C / hour for pre-burning, and keeping the temperature for 18 hours. The pre-fired powder is mechanically ball milled for 12 hours and dried; the pre-fired powder will be mixed with 3% mass concentration of polyvinyl alcohol (PVA) glue for granulation, where the weight of the glue is the powder 6% of the total weight; under a pressure of 200 MPa, press into a green sheet; heat the green body at a rate of 100°C / hour to 1370°C for sintering, keep it for 15 hours, and then reduce to room temperature at a rate of 150°C / hour, Finally sintered into a dense flake ceramic body; gold electrodes were sprayed on the upper and lower surfaces of the ceramic sheet, and the dielectric properties were measured with HP4284ALCR precision measuring instrument under conventional measurement conditions (1M...

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PUM

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Abstract

A sintering process for dielectric Nb2O5-TiO2 ceramic includes such steps as proportionally mixing Nb2O5 powder with TiO2 powder, heating at 1250 deg. C for 18 hr, proportionally adding PVC powder, granulating, die pressing, sintering at 1350-1380 deg. C for 2-15 hr and cooling. It has high dielectric coefficient.

Description

Technical field [0001] The invention belongs to the field of dielectric ceramic preparation. Background technique [0002] With the development of electronic technology, the size of microelectronic circuits has been made smaller and smaller, so the requirements for the performance of tiny components have become higher and higher. For capacitive components, the dielectric properties limit their minimization. Modern electronic materials will no longer be able to meet the performance requirements of capacitor components in microelectronic circuits. For example: the capacitor dielectric layer in the Dynamic Random Access Memory (DRAM) is made of SiO 2 Or Si 3 N 4 Manufactured, their relative permittivity ε under conventional measurement conditions (1MHz frequency and 25℃) r Respectively 3.8 and 6.0, this is far from meeting the current increasing demand for storage capacity. To develop and produce DRAM with a storage capacity of more than 1G, it has become an urgent task to find a ne...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/462C04B35/622C04B35/64
Inventor 王越张秋林蒋毅坚
Owner BEIJING UNIV OF TECH
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