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Magnetoresistive element and magnetic memory thereof

A technology of magnetoresistance effect elements and magnetic memory, which is applied to devices applying electro-magnetic effects, static memory, digital memory information, etc., can solve the problem that the area occupied by magnetoresistance effect elements increases and it is difficult to realize high-capacity memory integration issues

Inactive Publication Date: 2003-10-15
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, the area occupied by the magnetoresistive effect element increases, and it is difficult to realize the high integration required for a large-capacity memory.

Method used

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  • Magnetoresistive element and magnetic memory thereof
  • Magnetoresistive element and magnetic memory thereof
  • Magnetoresistive element and magnetic memory thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0084] In this example, the free ferromagnetic layer 4 was simulated using a computer to investigate the relationship between its planar shape and properties. It should be noted that, in this example, NiFe is used as the material of the free ferromagnetic layer 4, and its thickness is 2 nm.

[0085] Figure 7 A to 7H are diagrams showing the planar shape of the free ferromagnetic layer used in the simulation of Example 1. FIG. Figure 7 The free ferromagnetic layers 4 shown in A to 7H all have easy magnetization axes parallel to the y direction. Additionally, having Figure 7The magnetoresistive element 1 of the free ferromagnetic layer 4 having the shapes shown in A to 7D corresponds to an example of the present invention, and has Figure 7 The magnetoresistive element 1 having the free ferromagnetic layer 4 having the shapes shown in E to 7H corresponds to a comparative example. It should be pointed out that, Figure 7 The oblique one-dot dash line of A~7D corresponds t...

example 2

[0101] In this example, in addition to Figure 7 The free ferromagnetic layers 4 having planar shapes shown in A to 7H were simulated under the same conditions as those described in Example 1, except that the easy axis of magnetization was in the x direction. It should be noted that the magnetoresistance effect element 1 having such a free ferromagnetic layer 4 corresponds to a comparative example.

[0102] Figure 11 is about having Figure 7 The graphs of the data obtained from the free ferromagnetic layer with the shapes shown in A to 7H and the easy magnetization axis in the x direction. In the figure, the horizontal axis represents the coercive force H of the free ferromagnetic layer 4 C , the vertical axis represents its rectangular ratio M r / M s . In addition, in the figure, "Normal" indicates the data obtained when the planar shape of the free ferromagnetic layer 4 is a square. It should be noted that the following Table 2 shows the Figure 11 corresponding da...

example 3

[0106]In this example, the simulation was performed under the same conditions as those described in Example 1 except that CoFe was used as the material of the free ferromagnetic layer 4 .

[0107] Figure 12 is about having Figure 7 The shapes shown in A to 7H are graphs of data obtained using CoFe as the free ferromagnetic layer of the magnetic material. In the figure, the horizontal axis represents the coercive force H of the free ferromagnetic layer 4 C , the vertical axis represents its rectangular ratio M r / M s . In addition, in the figure, "Normal" indicates the data obtained when the planar shape of the free ferromagnetic layer 4 is a square. It should be noted that Table 3 below shows the Figure 12 corresponding data.

[0108] free ferromagnetic layer

plane geometry

W 2 / W 1

W 3 / W 1

h C (Oe)

m r / M s

Normal

_

_

60.799

0.826

(a)

0.05

_

1...

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Abstract

There is provided a magnetoresistance element in which a shape of a free ferromagnetic layer includes a first portion with a parallelogrammic contour, and second portions that protrude from a pair of opposite corners of the first portion respectively in a main direction parallel to a pair of opposite sides of the first portion, the shape is asymmetric with respect to a line that passes through a center of the first portion and is parallel to the main direction, and an axis of easy magnetization of the free ferromagnetic layer falls within a range defined by an acute angle that a first direction makes with a second direction, the first direction being substantially parallel to the main direction and the second direction being substantially parallel to the longest line segment that joins contours of the second portions.

Description

technical field [0001] The present invention relates to a magnetoresistance effect element and a magnetic memory. Background technique [0002] The magnetoresistance effect element has, for example, a structure in which a pair of ferromagnetic layers are laminated with a nonmagnetic layer interposed therebetween. The resistance value of this magnetoresistance effect element changes according to the relative direction of the magnetization of one ferromagnetic layer to the magnetization of the other ferromagnetic layer. A magnetoresistance effect element exhibiting such a magnetoresistance effect can be used in various applications, and a magnetic memory is one of main applications of a magnetoresistance effect element. [0003] In a magnetic memory, one ferromagnetic layer is a pinned ferromagnetic layer whose magnetization direction does not change when a magnetic field is applied, and the other ferromagnetic layer is a pinned ferromagnetic layer whose direction can be chan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/15G11C11/56H01L43/08
CPCG11C11/5607G11C11/15
Inventor 岸達也斉藤好昭天野実高橋茂樹西山勝哉上田知正
Owner KK TOSHIBA