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Semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices, which can solve problems such as difficulty in meeting customer requirements

Inactive Publication Date: 2004-01-21
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, although conventional semiconductor devices have advantages such as low voltage driving and low ON resistance, there is a problem that it is difficult to meet customer requirements due to current driving.

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

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Embodiment Construction

[0027] Hereinafter, the semiconductor device of the present invention will be described in detail with reference to FIGS. 1 to 5 .

[0028] 1(A) is a perspective view showing the structure of the semiconductor element of the present invention, and FIG. 1(B) is a plan view showing the structure of the semiconductor element of the present invention. As shown in FIG. 1(A), an N-type epitaxial layer 2 is deposited on an N+ type semiconductor substrate 1 . On this epitaxial layer 2, a plurality of grooves 7 are formed parallel to each other at equal intervals from the surface. Also, the substrate 1 is used as a drain extraction region, and the epitaxial layer 2 is mainly used as a drain region 3 . In addition, the side walls of the groove 7 are excavated almost vertically from the surface of the epitaxial layer 2, and the insulating film 6 is formed on the inner wall thereof. Further, in the groove 7, for example, polysilicon implanted with P-type impurities is deposited. The de...

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Abstract

The semiconductor device in this invention is characterized in that a variable potential insulating electrode 5 and a gate region 9 are held at the same potential through an Al layer 15, and they are used as a voltage drive type semiconductor element. In other words, a conduction path for ON operation is formed in the channel region 8 by varying the voltage on the variable potential insulating electrode 5 through a gate electrode G. Low voltage drive is realized by bringing the gate electrode G to a positive potential or a negative potential (or ground condition) through switching at the outside of the semiconductor device, thereby bringing about a pseudo-p-type or n-type region at the channel region 8.

Description

technical field [0001] The semiconductor device of the present invention is an element mainly composed of voltage drive, which has low ON resistance, low voltage drive and inrush current protection functions. Background technique [0002] Among conventional semiconductor devices, a transistor having a structure disclosed in JP-A-06-252408, for example, is known as a normally-off transistor having excellent controllability and low on-resistance during switching. [0003] 6(A) is a perspective view showing the structure of a conventional semiconductor element, and FIG. 6(B) is a plan view showing the structure of a conventional semiconductor element. As shown in FIG. 6(A), an N-type epitaxial layer 52 is deposited on an N+ type semiconductor substrate 51 . On this epitaxial layer 52, a plurality of grooves 57 are formed parallel to each other at equal intervals from the surface. Also, the substrate 51 is used as a drain extraction region, and the epitaxial layer 52 is mainly...

Claims

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Application Information

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IPC IPC(8): H01L29/80H01L29/739H01L29/78
CPCH01L29/739H01L29/7827H01L29/80
Inventor 岡田哲也吉村充弘吉田哲哉
Owner SANYO ELECTRIC CO LTD