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Integrated capacitor and its production method

A technology for integrating capacitors and capacitors, which is applied in the field of analog/digital converters or digital/analog converters or switching circuits, and can solve problems such as unimproved matching and wasted chip area

Inactive Publication Date: 2004-02-25
ALICORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Dummy metal has been used to arrange around each "finger" capacitor unit 31, but the matching problem has not been improved, and the dummy metal layout will waste precious chip area

Method used

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  • Integrated capacitor and its production method
  • Integrated capacitor and its production method
  • Integrated capacitor and its production method

Examples

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Embodiment Construction

[0034] see Figure 4 , Figure 4 It is a top view of the integrated capacitor unit with high matching degree of the present invention. Such as Figure 4 As shown, the integrated capacitor unit 40 includes an outer vertical metal plate 41 and inner vertical metal plates 42 a , 42 b , 42 c and 42 d in a lattice layout. The outer vertical metal plate 41 defines four grid areas 41a, 41b, 41c, and 41d, and the inner vertical metal plates 42a, 42b, 42c, and 42d are respectively located in the grid areas 41a, 41b, 41c, and 41d. A dielectric layer 45 is formed between the outer vertical metal plate 41 and the inner vertical metal plates 42a, 42b, 42c and 42d for insulation. Both the vertical metal plates 41 and 42 are formed on a semiconductor substrate (not shown), and each vertical metal plate is composed of multiple metal layers and metal plugs electrically connecting the multiple metal layers. Generally, the vertical metal plate 41 is electrically connected to a node A, and th...

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Abstract

The present invention provides an integrated capacitor with polarity and perfect matching property and its production method. It contains a semiconductor substrate; an exterior vertical plate placed on the semiconductor substrate, said exterior vertical plate is made up by utilizing several parallel first conducting strips which are electrically connected by means of several first plugs, and a lattice region is limited by said exterior vertical plat; on interior vertical plate which is placed on the semiconductor substrate in the lattice region and is made up by utilizing several parallel second conducting strips which are electrically-connected by means of several second plugs; and a horizontal conducting plate which is placed under the exterior vertical plate and interior vertical plateand positioned between them.

Description

technical field [0001] The present invention relates to an integrated capacitor (integrated capacitor) and its manufacturing method, especially to an integrated capacitor structure that can have polarity and has near-perfect matching (matching) characteristics, and is especially suitable for use in analog / digital converters (A / D converter) or digital / analog converter (D / A converter) or switching circuit (switch cap circuit) field. Background technique [0002] For a long time, passive components such as capacitors have been widely used in radio frequency (radiofrequency, RF) and mixed-signal (mixed-signal) circuits, such as filters (filters), resonant circuits (resonant circuits), and conductors Flow circuit (bypass) and other circuit design. In order to reduce the production and manufacturing costs, IC manufacturers or design companies are all striving to move towards the trend of increasing the integration level of integrated circuits. [0003] figure 1 It is a partial...

Claims

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Application Information

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IPC IPC(8): H01L21/70H01L27/01
Inventor 林文忠胡曼君
Owner ALICORP
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