Semiconductor device for reading signal from photod by transistor

Abstract

Pixels are disposed on a semiconductor substrate in a matrix shape. Each pixel includes a photodiode, a reset transistor, a source follower transistor and a select transistor. An active region in which the photodiode and transistors are disposed includes a first area in which the photodiode is disposed and a second area having an are elongated in a first direction. Each of the gate electrodes of the reset transistor, source follower transistor and select transistor crosses the area, elongated in the first direction, of the second area. An intra-pixel wiring line interconnects the drain region of the reset transistor and the gate electrode of the source follower transistor.

Description

[0001] Cross References to Related Applications [0002] This application is based on Japanese Patent Application No. 2002-251265 filed on August 29, 2002, the contents of which are incorporated herein by reference. technical field [0003] The present application relates to a semiconductor device that reads an electrical signal of each of a plurality of pixels provided on a semiconductor substrate to a signal reading line by means of a transistor, and the electrical signal is photoelectrically converted by a photodiode of the pixel. Background technique [0004] A solid-state imaging device (image sensor) manufactured according to a complementary MOS (CMOS) process usually uses an active pixel sensor (APS) in which a pixel is composed of: a photodiode for photoelectric conversion; a reset transistor to be applied to the photodiode; a source follower transistor that converts the signal charge of the photodiode into a voltage signal and outputs it; and a selection transistor ...

AI Technical Summary

Problems solved by technology

Pixels with large junction leakage become white dots, reducing image quality

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