Coulomb island style rectifying monomolecular diode and preparation thereof

A single-molecule and diode technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of large operating current, single resonance tunneling effect, inability to use single-electron circuits and molecular rectifier circuits, and achieve the effect of size reduction

Inactive Publication Date: 2004-04-21
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

This kind of resonant tunneling diode is symmetrical both in terms of the spatial structure of the diode and the energy level structure of organic molecules. This symmetry makes the resonant tunneling diode only have a single resonant tunneling effect, and works Large current, cannot be used in single electronic circuits and molecular rectification circuits

Method used

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  • Coulomb island style rectifying monomolecular diode and preparation thereof
  • Coulomb island style rectifying monomolecular diode and preparation thereof
  • Coulomb island style rectifying monomolecular diode and preparation thereof

Examples

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Embodiment 1

[0020] 1. Prepare a pair of metal nano-electrodes, such as those provided by British "Nature" (Nature, 1997, 389, 699) or American "Appl. Phys. Lett., 1999, 75, 301". Method to prepare electrodes:

[0021] (1) Coating polymethyl methacrylate / poly(methyl methacrylate-methacrylamide) (PMMA / P(MMA-MAA)) double-layer glue on the silica substrate 1 as an electron beam resist etchant; use the electron beam etching method to etch a groove with a width and depth of about 200 nanometers on the surface of the double-layer glue, the electron beam acceleration voltage used is 20 kV, and the beam spot size is 0.1 micron; reuse The thermal evaporator evaporates gold or copper about 15 nanometers thick on the surface, thereby depositing and forming metal nanowires in the groove; when evaporating metals, the vacuum degree must be higher than 1.0×10 -3 Pa, control the temperature of the silicon dioxide substrate to be room temperature, and the thickness of the metal film on the evaporation can...

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Abstract

The coulomb island commutating single molecule diode and manufacturing method the feature is: coats silicon dioxide substrate with a poly(methyl methacrylate), etches the slot on the surface with electron beam, evaporates metal to form the metal nano meter ling in the slot, adds the voltage on both end of the metal nano meter line to make it broken and form two metal nano meter electrode; dips the metal nano meter electrode in alkyl mercaptan and ethanol solution to form mercaptan film on the surface of electrode, then drops the solution containing CJ,N,C,IN or C59B on the nano meter electrode; adds DC bias voltage on the both end of electrode short-time, the organic molecule absorbed in one of the electrode mercaptan film and two electrode constitutes the coulomb island single molecule diode that has commutating effect.

Description

Technical field: [0001] The invention belongs to the technical field of single-molecule diodes, and in particular relates to a nanoscale Coulomb island-type rectifying single-molecule diode and a preparation method thereof. Background technique: [0002] The American "Physical Review Letters" (Phys.Rev.Lett., 1993, 70, 218) introduced a rectifying molecular diode composed of polar molecules, which is composed of two opposite metal nano-electrodes connected by a molecular multilayer film , because one end of the polar molecule used is easy to get electrons, and the other end is easy to lose electrons, so the current can pass in one direction but not in the opposite direction, so that this molecular diode has the function of rectification. Because the molecular multilayer film is connected between the two electrodes, the rectification effect is the common result of the current passing through multiple molecules, which makes it difficult to reduce the operating current of the d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861
Inventor 侯建国王兵王晓平曾长淦张琨
Owner UNIV OF SCI & TECH OF CHINA
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