Semiconductive glaze, its making method and insulator using said glaze

A technology of semi-conductivity and manufacturing method, applied in the direction of insulators, circuits, electrical components, etc., can solve the problems of not being able to obtain the pressure effect of the coating glaze, the reduction of the pressure effect, and the reduction of the strength of the insulator

Inactive Publication Date: 2004-05-12
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as in the past, as long as these conductive glazes are combined with a material with a high thermal expansion rate, such as a cristobalite material with a thermal expansion rate of about 0.42%, the difference in thermal expansion rate will reach about 0.10%, and the sufficient effect of coating glaze cannot be obtained. pressurized effect
[0011] However, in recent years, for example, amorphous crystal blanks with a thermal expansion rate of about 0.38% have been used in LP insulators, SP insulators, porcelain tubes, etc. In this case, if the above-mentioned conventional conductive glaze is used, the difference in thermal expansion rate is reduced to 0.06%, there is a problem that the pressurizing effect decreases with it
As a result, there is a problem that the strength of the insulator decreases and the specified strength cannot be achieved.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A metal oxide was prepared by mixing 94 wt% tin oxide, 5 wt% antimony oxide and 1 wt% niobium oxide. In addition, it is prepared to use the Segel glaze formula, and the chemical composition contains KNaO, MgO, and CaO mixed to achieve the values ​​shown in Table 1 below, and further contains 0.7Al 2 o 3 , 5.0 SiO 2 base glaze. Next, 30 wt% of the prepared metal oxide and 70 wt% of the base glaze were mixed to prepare a glaze composition. Afterwards, with respect to the 100wt% glaze composition, add boron oxide as a flux to the value shown in the following table 1, further add 65wt% water, pulverize and mix with a ball mill, as shown in the following table 1, make the examples of the present invention and comparison Example of semi-conductive glaze for slurry.

[0032]Apply the semiconductive glaze slurry of the inventive example and the comparative example to a 20mm×40mm×60mm plate sample, so that the glaze thickness reaches 0.3-0.4mm, and after drying, calcining at...

Embodiment 2

[0038] As a preferred method, in order to study the Al in the base glaze 2 o 3 and SiO 2 The effect, relative to the 100wt% glaze composition, the amount of boron oxide added as a flux is fixed at 3wt%, and the KNaO, MgO, and CaO of the base glaze are fixed at 0.25KNaO-0.4MgO-0.35 using the Segel glaze formula CaO, in this state, as shown in Table 2 below, changes the Al 2 o 3 and SiO 2 amount to make a semi-conductive glaze. Using the prepared semiconductive glaze, as in Example 1, the surface resistivity and appearance of the sample and the breaking load of the product were determined. The results are shown in Table 2 below. In addition, in Table 2, △ of the appearance indicates a usable minimum state in which many irregularities were observed.

[0039] Base Glaze (Segel Style)

[0040] From the results in Table 2, it can be seen that the Al in the base glaze 2 o 3 and SiO 2 The amount is preferably represented by the Segel glaze formula, Al 2 o 3 : 0.5...

Embodiment 3

[0042] As a preferred mode of the production method, in order to study the effect of the pulverized particle size of the raw material used as the Ca source of CaO constituting the base glaze, the glaze composition, and the raw material of the flux, boron oxide as a flux was used with respect to 100 wt% of the glaze composition. The added amount is fixed at 3wt%, and the composition of the base glaze is fixed at 0.25KNaO-0.4MgO-0.35CaO-5SiO with a Segel glaze 2 -0.7Al 2 o 3 In the state of , as shown in Table 3 below, the Ca source material and the particle size of the pulverization were changed to produce a semiconductive glaze. Here, wollastonite was compared with previously used calcium carbonate as the Ca source material. In addition, the wt% of the pulverized particles having a particle diameter of 10 μm or more was determined using a pulverized particle measuring machine (Sedigraph). Using the prepared semiconductive glaze, as in Example 1, the surface resistivity and ...

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Abstract

The present invention provides a semiconductive glaze product which exhibits low thermal expansion coefficient without adversely affecting other glaze characteristics, and which, when applied to an insulator, attains enhanced mechanical strength of the insulator; a method for producing the semiconductive glaze product; and an insulator coated with the semiconductive glaze product. The semiconductive glaze product contains a glaze composition and a flux, the glaze composition containing a KNaO-MgO-CaO-Al2O3-SiO2-based base glaze in which the compositional proportions of basic components; i.e., KNaO, MgO, and CaO, as represented by the Seger formula, are 0.1 to 0.4, 0.2 to 0.6, and balance, respectively, and containing a metal oxide composition including tin oxide and antimony oxide, wherein the amount of the flux is 10 parts by weight or less on the basis of 100 parts by weight of the glaze composition.

Description

technical field [0001] The present invention relates to a semiconductive glaze applied to the surface of a magnetic insulator to constitute a conductive glaze insulator, a method for producing the glaze, and an insulator to which the glaze is applied. Background technique [0002] So far, glaze has been applied to the surface of magnetic insulators, and the difference in thermal expansion rate between the insulator and the glaze (generally, the insulator is high and the glaze is low) shows the so-called compression effect of the glaze compressing the insulator, thereby improving the strength of the insulator. In this kind of glaze, some current flows to the surface of the insulator, and in order to remove stains attached to the surface of the insulator, and especially to improve the electrical insulating properties at the time of staining, a semiconductive glaze has been used. [0003] As such a semiconductive glaze, the present applicant has disclosed a sintered tin oxide-a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C4/14C03C8/02H01B1/08
CPCC03C4/14C03C8/02H01B1/08
Inventor 今井修村濑胜
Owner NGK INSULATORS LTD
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