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Inductor for radio-frequency integrated circuit

A technology of inductors and conductive plugs, applied in the field of inductors, can solve the problems of reduced inductor quality factor inductance, limited inductor frequency range, etc.

Inactive Publication Date: 2004-05-12
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the coupling between the metal layers of the prior art inductor and between the first metal layer (bottom metal layer) and the silicon substrate, the quality factor Q and inductance of the inductor are reduced, and due to the metal layer The coupling between the inductor and the first metal layer (bottom metal layer) of the inductor and the silicon substrate, the frequency range that can be used for the inductor is limited

Method used

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  • Inductor for radio-frequency integrated circuit
  • Inductor for radio-frequency integrated circuit
  • Inductor for radio-frequency integrated circuit

Examples

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no. 1 example

[0043] Figure 4 is a perspective view of a first inductor used in an RFIC according to a first embodiment of the present invention. A first inductor according to a first embodiment of the present invention includes a plurality of unit inductors each having an inverted trapezoidal cross-sectional structure and having the same size.

[0044] In particular, refer to Figure 4 , the first inductor D1 includes first, second and third unit inductors respectively D1a, D1b and D1c, which are connected laterally in a spiral form. If necessary, the first inductor D1 may include an additional unit inductor. Each of the first, second, and third unit inductors D1a, D1b, and D1c has an inverted trapezoidal structure and is formed of multiple metal layers arranged in such a way that the inter-metal layers within each of the metal layers The distance increases in the upward direction of the cell inductor.

[0045] For example, although not shown, if one layer of metal layers, such as lay...

no. 2 example

[0063] In the second embodiment of the present invention, the unit inductors are formed with different sizes and arranged according to their sizes to minimize the influence between the metal layer and the substrate and between the metal layers of adjacent unit inductors .

[0064] refer to Figure 7 , the second inductor D2 having a vertical spiral structure includes fourth, fifth, and sixth unit inductors D2a, D2b, and D2c, each of which has an inverted trapezoidal structure and is spirally arranged in a lateral direction . However, the fifth unit inductor D2b is smaller than the fourth and sixth unit inductors D2a and D2c. Accordingly, the fifth metal layer 68b of the fifth unit inductor D2b is connected to the fourth metal layer 62 of the fourth unit inductor D2a through the fourth conductive plug 66 and the fifth metal layer 67 of the fourth unit inductor D2a. The fourth metal layer 62a of the fifth unit inductor D2b passes through the fourth conductive plug 66b, the fi...

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Abstract

An inductor used in a radio frequency integrated circuit is disclosed. The inductor includes a plurality of unit inductors each having a vertical spiral structure, wherein a vertical cross-section of at least one unit inductor selected from the plurality of unit inductors is an inverted trapezoid.

Description

technical field [0001] The present invention relates to an inductor. More particularly, the present invention relates to an inductor used in a radio frequency integrated circuit (RFIC), which has a multilayer structure in a vertical direction and a spiral structure in a lateral direction. Background technique [0002] Inductors are typically passive components used in radio frequency integrated circuits. Since inductors occupy most of the area in RFIC and are affected by RFIC substrate leakage, it is difficult to obtain good circuit leakage current characteristics, which leads to poor communication quality. [0003] Inductors are also used as passive devices for impedance matching in RFICS, as a high quality factor for resonant circuits (L-C) used in voltage-controlled oscillators (VCOs), and play an important role in reducing phase noise. However, due to substrate leakage, it is difficult to fabricate inductors with a high quality factor using a complementary metal-oxide-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F27/245H01F17/00H01L23/522
CPCH01L2924/0002H01F17/0013H01L23/5227H01F17/0033H01L2924/3011H01L2924/00H01F27/245
Inventor 李光斗金勋泰赵启钰
Owner SAMSUNG ELECTRONICS CO LTD