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Device and method for treating plasma

A technology of plasma and processing device, applied in the field of plasma processing, can solve problems such as difficulty, high dielectric constant, oxidation of insulating film, etc.

Inactive Publication Date: 2004-06-09
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, if the O 2 When the resist is stripped after the interlayer film is processed by plasma treatment, the low dielectric constant insulating film exposed at the opening is easily oxidized by O radicals
As a result, there is a problem that a degenerated layer is formed on the surface due to volatilization of organic components in the low dielectric constant insulating film, and the dielectric constant becomes high due to moisture absorption of the degenerated layer.
Although there is a method of detecting the end of ashing of the resist based on the surface state of the substrate to be processed (for example, refer to Japanese Patent Laid-Open No. 2001-189305, USP6492186), even with this method, it is difficult to detect the ashing rate itself of, therefore, judging the correct cleaning timing, is difficult

Method used

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  • Device and method for treating plasma
  • Device and method for treating plasma
  • Device and method for treating plasma

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Experimental program
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Effect test

Embodiment 1

[0046] FIG. 1 is a schematic configuration diagram showing a plasma processing apparatus according to Embodiment 1 of the present invention.

[0047] In FIG. 1 , 10 is a vacuum processing container, and a lower electrode 11 and an upper electrode 12 are arranged to face each other in the container 10 . The lower electrode 11 also serves as a wafer mounting table, and a substrate 13 to be processed, such as a semiconductor wafer, is placed on the lower electrode 11 . A 13.56MHz high-frequency power supply 14 is connected to the lower electrode 11, and the upper electrode 12 is grounded. Discharge can be generated by applying high-frequency power between these electrodes 11 and 12.

[0048] A gas inlet 15 and a gas outlet 16 are provided in the container 10 . From the gas introduction port 15, a gas containing hydrogen atoms is introduced by adjusting a predetermined flow rate. A vacuum pump 18 is connected to the gas discharge port 16 through an opening adjustment valve 17, a...

Embodiment 2

[0072] Figure 15 It is a schematic configuration diagram showing a plasma processing apparatus according to Embodiment 2 of the present invention. In addition, the same code|symbol is attached|subjected to the same part as FIG. 1, and detailed description is abbreviate|omitted.

[0073] The basic structure is the same as that in FIG. 1 , but the Cu piece as the ring member 20 is not provided. In addition, an optical sensor 41 for monitoring plasma light emission is provided on a part of the wall surface of the container 10 , and the detection output is supplied to a signal processing circuit 42 . Here, the optical sensor 41 is used to detect a wavelength of 656 nm showing the largest change among the emission wavelengths of hydrogen atoms.

[0074] With such a configuration, the luminescence intensity detected by the optical sensor 41 can be taken in as a signal and processed by the signal processing circuit 42 to monitor the luminescence intensity of the plasma. The lumin...

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Abstract

The plasma processing device of the present invention comprises: a container to receive the processed substrate; an inlet opening to introduce hydrogen-containing gas into the container; a lower electrode to load the processed substrate in the container; an upper electrode to generate plasma in the container, and opposed to the lower electrode; a power source to apply voltage between the lower electrode and the upper electrode; and a metal oxide structure disposed in one portion of the container. The metal oxide structure is reduced when the hydrogen-containing gas is introduced.

Description

technical field [0001] The present invention relates to a plasma processing technology for performing plasma processing on the surface of a substrate to be processed, and in particular, to a plasma processing apparatus and a plasma processing method for ashing a resist, etc., and a semiconductor manufacturing apparatus using them . Background technique [0002] In recent years, as semiconductor devices have been miniaturized and increased in speed, signal propagation delays due to inter-wiring parasitic capacitance and wiring resistance have become a problem. In order to reduce the parasitic capacitance between wirings, it is being considered to use a low dielectric constant insulating film (low-k film) such as a silicon oxide film or an organic film as an interlayer insulating film. [0003] However, if the O 2 When the resist is stripped after the interlayer film is processed by plasma treatment, the low dielectric constant insulating film exposed at the opening is easil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01J37/32H01L21/314H01L21/768
CPCH01J2237/3342H01J37/32431
Inventor 大内淳子大岩德久
Owner KK TOSHIBA