Electron emitter and method for fabricating the same, cold cathode field electron emission element and method for fabricating the same, and cold cathode field electron emission display and method

Abstract

A cold cathode field emission device comprises; a cathode electrode 11 formed on a supporting member 10, an insulating layer 12 formed on the supporting member 10 and the cathode electrode 11, a gate electrode 13 formed on the insulating layer 12, an opening portion 14A, 14B formed through the gate electrode 13 and the insulating layer 12, and an electron emitting portion 15 formed on the portion of the cathode electrode 11 positioned in the bottom portion of the opening portion 14B, and said electron emitting portion 15 comprises a matrix, 21 and carbon nanotube structures 20 embedded in the matrix 21 in a state where the top portion of each carbon nanotube structure is projected.

Description

technical field [0001] The invention relates to an electron emitter and its manufacturing method, a cold cathode field electron emission component and its manufacturing method, and a cold cathode field electron emission display device and its manufacturing method. Background technique [0002] In recent years, carbon crystals and carbon nanofibers called carbon nanotubes having a tube structure in which carbon graphite sheets are rolled have been discovered. The diameter of carbon nanotubes is about 1 nm to 200 nm. Known are: single-layer carbon nanotubes with a structure rolled by one layer of carbon graphite sheets and multilayer carbon nanotubes with a structure rolled by more than two layers of carbon graphite sheets carbon nanotubes. No other crystals have been found to be comparable to this crystal with a nanometer-sized tube structure, thus establishing its status as a special substance. In addition, carbon nanotubes have the property of becoming a semiconductor or ...

AI Technical Summary

Problems solved by technology

Therefore, in the above-mentioned step (5), when the carbon nanotube structure is uniformly formed on the negative electrode exposed at the bottom of the opening by the plasma CVD method, it will be difficult if the display device has a large area, and , Damage may occur on field emission components such as gate electrodes, openings, and cathode electrodes that have already been formed.

In addition, when forming a carbon nanotube structure by the plasma CVD method, if an inexpensive glass substrate is used, the formation temperature needs to be lowered to a very low level (below 550°C), but carbon nanotubes will be produced at such a formation temperature. Deterioration of the crystallinity of the structure

On the other hand, if the forming temperature is to be kept at a high temperature, a high-temperature-resistant substrate such as ceramic must be used, which increases the cost

In addition, there is also a problem that the growth of the carbon nanotube structure is hindered due to the influence of outgassing from the insulating layer during the formation process

However, when such a countermeasure is adopted, there is a problem that it is difficult to form a high electric field intensity near the carbon nanotube structure, resulting in a decrease in the electron emission efficiency of the carbon nanotube structure.

However, in this method, since the carbon nanotube structure is buried in the binder material, there is a problem that the electron emission efficiency of the carbon nanotube structure decreases.

Images