Structure of nonvolatile memory cell

Abstract

The memory cell is composed of a grid electrode, a bit line and a word line. The bit line consists of embedded diffused conducting wire and a raised conducting layer on the embedded diffused conducting wire. Grid electrode is located between raised conducting layers of bit line. Word line perpendicular to bit line roughly is located on grid electrode and stepped across raised conducting layers of bit line. Sidewall of raised conducting layers of bit line possesses first gap wall and second gap wall on gap wall of word line.

Description

Technical field [0001] The present invention relates to a structure of a storage element, and more particularly to a structure of a non-volatile storage element. Background technique [0002] In very large scale integrated circuits and very large scale integrated circuits, contacts are used to connect multi-layer circuit structures. In the development process of integrated circuits, when the component size advances to the sub-micron technology level, the traditional contact window not only gradually falls short of the demand, but also restricts the performance of the component in many aspects. As the area of ​​the contact window shrinks with the size of the component, its resistance also increases. Especially when the diffusion area shrinks with the size of the component, the alignment between the contact window and the diffusion area becomes a problem. In order to avoid the contact window and diffusion Misalignment of the region causes process problems and component failures. It...

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Problems solved by technology

In the development process of integrated circuits, when the component size advances to the sub-micron technical level, the traditional contact window is not only gradually insufficient, but also limits the performance of the component in many ways

When the area of ​​the contact window shrinks with the size of the device, its resistance also increases, especially when the diffusion area shrinks with the size of the device, the alignment of the contact window and the diffusion area becomes a difficult problem. In order to avoid the contact window and the diffusion Area misalignment causes process problems and component failure. It is often necessary to reserve space for misalignment that will reduce component integration, or to maintain or even increase the area of ​​the diffusion area, but increasing the area of ​​the diffusion area will increase the substrate and diffusion area. junction capacitance between, thus reducing component speed

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