Glass material and preparing method and application thereof

Abstract

The invention discloses a lead-free low-temperature glass material acting as protective layer of multiplayer sheet zinc oxide pressure sensitive resistor as well as its preparing method. It includes concrete components as follows: SiO2 30-50%, B2O3 20-35%, Al2O3 5-17 W%, RO 0-15W%, R2O 5-15%, and rare-earth oxide 0.5-1.5%. It has high transparency, good chemical stability, operating temperature not higher than 700 deg.C, primely meets the requirement for protective layer of multiplayer zinc oxide pressure sensitive resistors and solves the defects of traditional flint glass like harm to human heath, serious environmental pollution, etc.

Description

technical field [0001] The invention relates to a glass material, in particular to a lead-free low-temperature glass material used as a protective layer for a zinc oxide multilayer chip piezoresistor. The invention also relates to a preparation method of the glass material. Background technique [0002] There is no patent available for the glass used for the protective layer of chip multilayer varistors. This kind of glass is required to have the following functions: melting at the lowest possible temperature; the formed glass film should have low glass diffusion to prevent diffusion ions from entering the sealed varistor; the expansion coefficient and varistor Matching, it should be 40×10 in the temperature range of 20~300℃ -7 / ℃~70×10 -7 / °C. [0003] In the existing technology, the protective glass of electronic products is mostly leaded glass. Due to the low melting point of lead, it is the main component of traditional low melting point glass. Lead has low cost and ...

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Problems solved by technology

Chinese patent 01116136.1 discloses glass and glass tubes for encapsulating semiconductors. The disclosed borosilicate glass has an expansion coefficient of 85×10 at 30-380°C. -7 / ℃~105×10 -7 / °C, the optimal composition of alkali metal content is 14-20%, too much alkali metal content is not conducive to the improvement of glass chemical stability and electrical insulation, and the expansion coefficient is too large and it is not suitable for expansion coefficients less than 70×10 -7 / ℃ chip multilayer ZnO varistor protective layer, the difference in expansion coefficient is too large, the expansion coefficient of glass and ZnO ceramics does not match, resulting in thermal stress, which is not conducive to the stability of the encapsulation layer

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