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Apparatus and method for improving etch rate uniformity

A technique for etching equipment and electrodes, which is applied in the field of substrate support and can solve problems such as uneven field lines on the surface of wafers

Inactive Publication Date: 2005-02-23
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the geometry of the upper electrode 108 and chuck 102, the field lines may not be uniform across the wafer surface and may vary significantly at the edge of the wafer 104

Method used

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  • Apparatus and method for improving etch rate uniformity
  • Apparatus and method for improving etch rate uniformity
  • Apparatus and method for improving etch rate uniformity

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Embodiment Construction

[0022] Embodiments of the invention are described herein in the context of improved etch rate uniformity in dual frequency plasma etch reactors. Those skilled in the art will appreciate that the following detailed description of the present invention is illustrative only, not limiting in any way. Other embodiments of the invention will readily occur to those skilled in the art having the benefit of this disclosure. Reference will now be made in detail to implementations of the invention as illustrated in the accompanying drawings. The same reference symbols will be used throughout the drawings and the following detailed description to refer to the same or like parts.

[0023] For the sake of clarity, not all routine components of the implementations of the invention described herein are shown and described. It should of course be understood that in the development of any such actual implementation, many implementation-specific matters must be determined in order to achieve t...

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Abstract

An etching apparatus has a chamber enclosing a first electrode, a second electrode, confinement rings, a focus ring, and a shield. The first electrode is coupled to a source of a fixed potential. The second electrode is coupled to a dual frequency RF power source. The confinement rings are disposed between the first electrode and the second electrode. The chamber is formed of an electrically conductive material coupled to the source. The focus ring substantially encircles the second electrode and electrically insulates the second electrode. The shield substantially encircles the focus ring. The distance between an edge of the second electrode and an edge of the shield is at least less than the distance between the edge of the second electrode and an edge of the first electrode. The shield is formed of an electrically conductive material coupled to the source of fixed potential.

Description

[0001] Cross-reference to related applications [0002] This application claims the benefit of US Provisional Patent Application Serial No. 60 / 338,034, filed November 13, 2001 in the name of the same inventor. technical field [0003] This invention relates to substrate support. More specifically, the present invention relates to a method and apparatus for achieving a uniform plasma distribution over a substrate during plasma processing. Background technique [0004] Typical plasma etching equipment includes a reactor in which there is a chamber through which a reactant gas flows. Within this chamber, a gas is ionized into a plasma, typically by radio frequency energy. The highly reactive ions of the plasma gas can react with materials such as polymer masks on the surface of semiconductor wafers from which integrated circuits are made. Prior to etching, the wafer is placed within the chamber and held in place by a chuck or holder that exposes one top surface of the wafer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/00
CPCH01J37/32623H01J37/32697H01J37/32009H01L21/67069H01J37/32642H01L21/3065
Inventor R·丁萨B·凯德科达扬
Owner LAM RES CORP