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Magnetic tunnel junction and memory device including the same

A technology of magnetic tunnel junction and random access memory, which is applied in the field of manufacturing MRAM devices with multi-layer free magnetic layers, and can solve problems such as increased power consumption and operational failures

Active Publication Date: 2011-06-22
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0033] In summary, magnetic defects in conventional magnetic tunnel junctions lead to increased power consumption and operational failure

Method used

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  • Magnetic tunnel junction and memory device including the same
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  • Magnetic tunnel junction and memory device including the same

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Embodiment Construction

[0055] The invention will now be described in detail with reference to several preferred but non-limiting examples.

[0056] At least part of the invention is characterized by a magnetic tunnel junction (MTJ) comprising a multi-laminated free magnetic layer. see Figure 10(A) and 10(B) , which shows the comparison between the conventional free magnetic layer and the multilayer free magnetic layer of an embodiment of the present invention.

[0057] As shown in FIG. 10(A), the conventional free magnetic layer is composed of a layer of NiFe stacked on a CoFe layer. These layers are thicker. For example, the CoFe layer is about 10 angstroms thick and the NiFe layer is about 30 angstroms thick, resulting in a total free magnetic layer thickness of about 40 angstroms. As previously explained, these thick layers of MTJs, especially the NiFe layers, contain large and irregular grains that form numerous domain walls that reduce magnetization uniformity.

[0058] In contrast, as sh...

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Abstract

A magnetic tunnel junction device and a memory device including the same. The magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layers.

Description

technical field [0001] The present invention generally relates to magnetic random access memory (MRAM) devices, and in particular, the present invention relates to MRAM devices having multiple free magnetic layers and methods of making MRAM devices having multiple free magnetic layers. Background technique [0002] A magnetic random access memory (MRAM) device is a type of non-volatile memory in which data is stored by programming a magnetic tunnel junction (MTJ). The MTJ can selectively switch between two magnetic orientations. The different resistance values ​​between these two orientations are used to differentiate the logic values ​​of the memory cells. [0003] figure 1 is a simplified schematic of an MTJ in one of a low resistance logic "0" magnetic state and a high resistance logic "1" magnetic state. In the figure, reference numeral 101 denotes a free magnetic layer composed of a ferromagnetic material, reference numeral 102 denotes a tunneling barrier layer, and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F10/32H01L43/08G11C11/15
CPCB82Y25/00H01F10/3204H01F10/3272G11C11/15H01F10/3254H01L43/08H01F10/3295H10N50/10
Inventor 河永寄李将银吴世忠裵晙洙金炫助白寅圭
Owner SAMSUNG ELECTRONICS CO LTD