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Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell

A technology of solar cells and manufacturing methods, applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as conversion efficiency decline, low open circuit voltage of solar cells, and inability to obtain carrier density

Inactive Publication Date: 2005-03-23
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, according to the method of forming CIGS thereon after forming the Na-containing layer, a sufficient increase in carrier density cannot be obtained, which means a low open circuit voltage of the solar cell, thus resulting in a decrease in conversion efficiency in some cases
In the case of increasing the doping amount of Na by increasing the film thickness of the Na-containing layer, the crystal growth of the CIGS film is suppressed, resulting in an increase in crystal defects in some cases
In this way, the method of forming the Na-containing layer has limited control over the carrier density
[0006] Meanwhile, according to the method of doping Vb group elements, since the activation yield of Vb group dopants in the CIGS film is low, it is necessary to dope a large amount of elements in order to increase the carrier density
In this case, there is a problem that the carrier density cannot be increased proportionally to the doping amount, so there is still a limit to the control of the carrier density

Method used

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  • Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell
  • Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell
  • Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell

Examples

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Effect test

Embodiment 1

[0054] figure 1 is a cross-sectional view showing an example of the solar cell of the present invention. Such as figure 1 As shown, the solar cell 1 of this embodiment is formed to include an electrode layer 12 , a light absorbing layer 13 , a window layer 14 and a transparent electrode layer 15 sequentially stacked on a substrate 11 .

[0055] As the substrate 11, for example, a glass substrate, a metal substrate (a stainless steel plate, a Ti plate, etc.), or a metal substrate coated with an insulating film can be used.

[0056] The electrode layer 12 is formed of, for example, a metal thin film such as Mo.

[0057] As the window layer 14, for example, Zn-based compounds such as ZnO and Zn 1-x Mg x O(02 o 3 and In 2 S 3 or oxides such as Ga 2 o 3 and Al 2 o 3 .

[0058] As the transparent electrode layer 15 , for example, ITO, ZnO:Al or ZnO:Ga obtained by doping ZnO with a group III element such as Al or Ga can be used.

[0059] The light absorbing layer 13 is a...

Embodiment 2

[0069] Figure 4 is a cross-sectional view showing another example of the solar cell of the present invention. Such as Figure 4 As shown, the solar cell 2 of this embodiment is formed to include a transparent electrode layer 22 , a window layer 23 , a light absorbing layer 24 and an electrode layer 25 stacked on a transparent substrate 21 in sequence.

[0070] As the transparent substrate 21, for example, a glass substrate can be used.

[0071] As the transparent electrode layer 22 , for example, ITO, ZnO:Al or ZnO:Ga in which ZnO is doped with a group III element such as Al or Ga, or the like can be used.

[0072] As the window layer 23, for example, Zn-based compounds such as ZnO and Zn 1-x Mg x O(02 o 3 and In 2 S 3 , or oxides such as Ga 2 o 3 and Al 2 o 3 .

[0073] The light-absorbing layer 24 is a semiconductor layer (semiconductor film) formed of the same material and the same manufacturing method as the light-absorbing layer 13 described in Embodiment 1. ...

Embodiment 3

[0081] Another embodiment of the manufacturing method of the solar cell of the present invention will be described below. The manufacturing method of this example is different from the manufacturing method of embodiment 1 and embodiment 2 in that manufacturing such as figure 1 and 4 Steps for light absorbing layers 13 and 24 of solar cells 1 and 2 are shown. According to the manufacturing method of this example, when the Ib group element, the IIIb group element and the VIb group element are supplied, the Ia group element and the Vb group element are also supplied at the same time, so that the semiconductor layers functioning as the light absorbing layers 13 and 24 are formed.

[0082] As the group Ib element, the group IIIb element and the VIb group element, the Ia group element and the Vb group element, for example, the same materials as those in Embodiment 1 can be used. As a method of supplying the group Ib element, the group IIIb element, and the group VIb element, for e...

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Abstract

A semiconductor film has a composition in which a Group Ia element and a Group Vb element are added to a compound semiconductor with a chalcopyrite structure containing a Group Ib element, a Group IIIb element and a Group VIb element. This allows the provision of a semiconductor film whose carrier density can be controlled effectively. A solar cell (1) of the present invention includes: a substrate (11) and the semiconductor film of the present invention that is provided as a light-absorption layer (13) on the substrate (11). With this configuration, a light-absorption layer whose carrier density can be controlled effectively can be provided, so that a solar cell having a high energy conversion efficiency can be provided.

Description

technical field [0001] The present invention relates to a semiconductor film, a method for manufacturing the semiconductor film, a solar cell using the semiconductor film, and a method for manufacturing the solar cell. Background technique [0002] Using CuInSe 2 (hereinafter referred to as CIS) and Cu(In, Ga)Se 2 (hereinafter referred to as CIGS) solar cells as the light absorbing layer have the following advantages: high energy conversion efficiency and no efficiency drop caused by light irradiation, in which CuInSe 2 It is a compound semiconductor (semiconductor composed of chalcopyrite) containing group Ib elements, group IIIb elements and group VIb elements, and Cu(In, Ga)Se 2 is a solid solvent for CIS with Ga. [0003] In general, in order to improve the efficiency of solar cells, it is very important to control the carrier density. For example, it is known that in a solar cell using a CIGS film which is a semiconductor film as a light absorbing layer, Na, which i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B15/14H01L29/732H01L31/00H01L31/0264H01L31/0288H01L31/032H01L31/0328H01L31/0336H01L31/042H01L31/072H01L31/109H01L31/18
CPCH01L31/0323Y02E10/52Y02E10/541Y02P70/50
Inventor 根上卓之佐藤琢也桥本泰宏
Owner PANASONIC CORP