Unlock instant, AI-driven research and patent intelligence for your innovation.

End point detection in time division multiplexed etch processes

A technology with many time divisions and processes, applied in the direction of discharge tubes, electrical components, circuits, etc.

Active Publication Date: 2006-02-22
美国犹奈克赛斯股份有限公司
View PDF9 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

OEI technology is not suitable for TDM processes involving repeated deposition and etching steps, due to the cyclic addition and removal of passivation film as etching progresses

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • End point detection in time division multiplexed etch processes
  • End point detection in time division multiplexed etch processes
  • End point detection in time division multiplexed etch processes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] A preferred embodiment of the invention relates to a method of detecting transitions between different materials in a time division multiplex (TDM) process by analyzing at least one wavelength component of electromagnetic emissions collected at a frequency corresponding to the frequency (v) of the TDM process.

[0039] deposition

etching

SF 6 flow

sccm

0.5

100

C 4 f 8 flow

sccm

70

0.5

Ar flow

sccm

40

40

pressure

mtorr

22

23

RF bias power

W

1

12

ICP power

W

1000

1000

step time

Second

4

6

[0040] Note that the deposition and etching steps differ in chemistry, RF bias power, and pressure, resulting in significantly different emission spectra. Due to the repetitive nature of the TDM process and the duration of the etch steps, the example process in Table I has a cycle repetition t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An improved method for determining endpoint of a time division multiplexed process by monitoring an identified region of a spectral emission of the process at a characteristic process frequency. The region is identified based upon the expected emission spectra of materials used during the time division multiplexed process. The characteristic process frequency is determined based upon the duration of the steps in the time division multiplexed process. Changes in the magnitude of the monitored spectra indicate the endpoint of processes in the time division multiplexed process and transitions between layers of materials.

Description

[0001] Cross References to Related Applications [0002] This application claims the priority of and related to U.S. Provisional Patent Application Serial No. 60 / 447,594, filed February 14, 2003, entitled: End Point Detection in Time Division Multiplexed Etch Processes right, which is hereby incorporated by reference into this Provisional Patent Application. technical field [0003] The present invention generally relates to the field of semiconductor manufacturing. More specifically, the present invention relates to improved endpoint detection methods for time-division multiple etch and deposition processes. Background technique [0004] During the fabrication of many MEMs devices, it is necessary to etch material layers, stopping on the underlying layer (eg, silicon-on-insulator (SOI)-clear silicon (Si) layer, stopping on the underlying silicon dioxide layer) to complete. Allowing the etch process to proceed beyond the time the first layer has been removed may result in ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01LH01L21/44
CPCH01J37/32963H01J37/32935
Inventor 罗素·韦斯特曼大卫·J·约翰逊
Owner 美国犹奈克赛斯股份有限公司