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Method of forming trench isolation structure

A trench isolation and pre-drying technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as changing the shape of grooves

Inactive Publication Date: 2006-04-05
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the disadvantage of these methods is that in some cases, voids are formed in the grooves, changing the shape of the grooves formed in the substrate
But the inventor's research shows: there is room for improvement about these methods

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0126] On the silicon substrate having the trench isolation grooves formed by the method described above, a trench isolation structure was formed by the following method.

[0127] (1) The polysilazane solution A was spin-coated on a silicon substrate under the coating conditions of a rotation speed of 1000 rpm and a rotation time of 30 seconds. When coating on a bare silicon substrate under the same conditions, the coating thickness is 600nm.

[0128] (2) Pre-baking the coated substrate by heating, 100°C, 150°C and 200°C in sequence, 2 minutes at each temperature.

[0129] (3) Place the pre-dried substrate in a curing furnace under a pure oxygen environment while maintaining the temperature at 200°C, wherein the pre-dried substrate is heated to 800°C in an oxygen environment with a water vapor concentration of 70%, and the temperature increase rate at 10°C / min, and reheating was carried out at this temperature for 30 minutes to cure the coating.

[0130] For a thin film form...

Embodiment 2

[0135] The steps of Example 1 were repeated, except that the polysilazane solution was changed to polysilazane solution B, the coating and curing of the polysilazane solution were divided into 3 times, and steps (1)-(3) were repeated 3 times.

Embodiment 3

[0137] The steps of Example 1 were repeated except that the polysilazane solution was changed to polysilazane solution B. After step (3), a 300 nm thick silicon dioxide film was formed by HDP-CVD.

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Abstract

There is provided a method for trench isolation structure formation, which produces neither voids nor cracks within a groove. This method comprises the steps of: forming a groove on a surface of a silicon substrate; coating a polysilazane solution; prebaking the coating at a prebaking temperature regulated so that the temperature is raised in a temperature range of 50 DEG C to 400 DEG C over time; curing the coating at a temperature above the maximum prebaking temperature; and polishing and etching the film. The prebaking is carried out while raising the temperature either stepwise in two or more stages or in a monotonically increasing manner.

Description

technical field [0001] The invention relates to a method for forming a trench isolation structure in an electronic device. More particularly, the present invention relates to a method of forming a trench isolation structure for insulation in an electronic component using polysilazane when manufacturing an electronic device such as a semiconductor device. Background technique [0002] In electronic equipment such as semiconductor equipment, generally semiconductor elements such as transistors, resistors, etc. are arranged on a substrate and should be electrically insulated from each other. To this end, it is necessary to arrange regions between these elements which isolate the elements from one another. This area is called the quarantine area. Isolation regions have hitherto been formed by selectively forming an insulating film on the surface of a semiconductor substrate. [0003] On the other hand, in the field of electronic equipment in recent years, an increase in densi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762H01L21/76H01L21/316
CPCH01L21/76224H01L21/762
Inventor 一山昌章名仓映乃石川智规樱井贵昭清水泰雄
Owner MERCK PATENT GMBH
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