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Cmp pad having a radially alternating groove segment configuration

A polishing pad and polishing layer technology, applied in the field of polishing, can solve problems such as the rate of gap flow that is not directly considered

Inactive Publication Date: 2006-07-19
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Although pad designers have so far designed CMP pads that include two or more groove structures that are different from each other or that differ in different regions of the pad, these designs have not directly The benefit of the velocity of flow in the gap between the wafer and polishing pad over the width of the wafer track

Method used

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  • Cmp pad having a radially alternating groove segment configuration
  • Cmp pad having a radially alternating groove segment configuration
  • Cmp pad having a radially alternating groove segment configuration

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Embodiment Construction

[0021] See attached picture, figure 1 The main structure of a dual-axis chemical mechanical polishing (CMP) machine 100 suitable for use with the polishing pad 104 of the present invention is generally shown. Polishing pad 104 is typically comprised of articles intended to contact semiconductor wafers 112 (processed or unprocessed) or other workpieces (eg, glass, flat panel displays, or magnetic information storage discs, etc.) such that in the presence of polishing media 120 The polishing layer 108 that polishes the polishing surface 116 of the workpiece is underneath. For convenience, the term "wafer" is used generically in this description. In addition, in the present specification including the claims, the term "polishing medium" includes particle-containing polishing solutions and particle-free solutions, such as reactive liquid polishing solutions that do not contain abrasives. Polishing layer 108 generally includes an annular wafer track, or polishing track 122 , that...

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Abstract

A polishing pad ( 104 ) having an annular polishing track ( 122 ) and including a plurality of grooves ( 148 ) that each traverse the polishing track. Each groove includes a plurality of flow control segments (CS 1 -CS 3 ) and at least two discontinuities in slope (D 1, D 2 ) located within the polishing track.

Description

[0001] This application is a continuation-in-part of currently pending application serial number 11 / 036263, filed January 13,2005. technical field [0002] The present invention relates generally to the field of polishing. In particular, the present invention relates to chemical mechanical polishing (CMP) pads having a structure of radially alternating groove segments. Background technique [0003] During the fabrication of integrated circuits and other electronic devices, layers of conductive, semiconducting, and dielectric materials are deposited and then etched onto the surface of a semiconductor wafer. Thin layers of conducting, semiconducting and dielectric materials can be deposited using a variety of deposition techniques. Conventional deposition techniques in modern wafer processing include physical vapor deposition (PVD) (also known as sputtering), chemical vapor deposition (CVD), plasma-assisted chemical vapor deposition (PECVD), and electrochemical plating, among...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/00B24B37/04H01L21/304B24B37/26
Inventor C·L·埃尔姆蒂J·J·亨敦G·P·穆尔唐尼
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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