Semiconductor device and manufacturing method thereof
A semiconductor and device technology, applied in the field of semiconductor devices, can solve problems such as MOSFET difficulties, SON structure difficulties, consistent formation of cavity parts, and difficulties in optimizing insulating films, etc.
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no. 1 example
[0026] figure 1 A schematic diagram of the semiconductor device according to the first embodiment is shown. figure 1 (a) shows a plan view, while figure 1 (b) shows along figure 1 Cross-sectional view of A-A' in (a).
[0027] A strain-relaxed SiGe layer (first semiconductor layer) 11 is formed on a support substrate 10 . Groove portion (cavity portion) 13 is formed by selectively etching the surface portion of SiGe layer 11 . The groove portion 13 is formed so that the SiGe layer 11 has two island-like protrusions which are spaced apart from each other by a predetermined distance. A strained Si layer (second semiconductor layer) 12 is formed on the protrusion of the SiGe layer 11 . A portion of the strained Si layer 12 is formed so as to straddle the groove portion 13 formed between the two protrusions.
[0028] Gate electrode 15 is formed through gate insulating film 14 so as to surround strained Si layer 12 on groove portion 13 . Most of the gate electrode 15 is proce...
no. 2 example
[0042] Figure 4 A semiconductor device according to the second embodiment is shown. Figure 4 (a) is a plan view, and Figure 4 (b) is Figure 4 View of section A-A' in (a). shown in figure 1 The same or similar elements in are denoted by similar symbols, and their detailed explanations are omitted here.
[0043] The groove portion 13 and the relaxed SiGe layer 11 are in contact with each other in the first embodiment, but the SiGe oxide 32 may remain therebetween, as Figure 4 shown. In this case, since the gate electrode 15 and the source / drain electrodes 17, 18 are insulated from each other by the SiGe oxide 32, in the MOSFET around the gate, the gate electrode 15 and the source electrode are insulated only by the thin gate insulating film 14. The leakage current flowing between the gate and the source / drain can be reduced compared to the case of the / drain 17, 18.
[0044] The above structure can be implemented in the following manner.
[0045] In the step of oxid...
no. 3 example
[0050] FIG. 6 shows a strained SON structure of a semiconductor device according to a third embodiment. Fig. 6(a) is a plan view, and Fig. 6(b) is a view of A-A' section in Fig. 6(a). and figure 1 The same or similar elements shown in are denoted by similar symbols, and their detailed explanations are omitted here.
[0051] The present invention has a strained SON structure in which a strained silicon layer 12 and a strained relaxed silicon layer 62 are formed on a strained SiGe layer 61 and a cavity portion 13 exists under the strained silicon layer 12 .
[0052] In order to explain the process of fabricating the strained SON structure according to this embodiment, the main steps are in Figure 7A , Figure 7B ,and Figure 8A to Figure 8C shown schematically.
[0053] Figure 7A , 7B corresponds to the A-A' section of Fig. 6(a), Figure 8A to Figure 8C (a1), (b1) and (c1) correspond to the B-B' section of Fig. 6(a), and Figure 8A to Figure 8C (a2), (b2) and (c2) corr...
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