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Mask, mask manufacturing method, pattern forming apparatus, and pattern formation method

A mask and pattern technology, which is applied in the direction of lighting device, pattern surface photolithography process, semiconductor/solid-state device manufacturing, etc., can solve the problem of large deflection, difficulty in silicon mask transportation, silicon mask loading and unloading evaporation method, It is difficult to prevent large-scale silicon masks from bending due to their own weight, and achieve the effect of preventing bending

Inactive Publication Date: 2006-08-30
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0009] However, in the technology of Patent Document 1, it is difficult to realize the transfer of the silicon mask or the substrate to be evaporated, the attachment and detachment of the silicon mask, and the evaporation method in the lateral direction, and it cannot be put into practical use.
[0010] In addition, in the technique of Patent Document 2, if the magnetic film is formed on the entire surface of the silicon mask, the weight of the magnetic film conversely increases the deflection, and the internal stress of the magnetic film ( Film stress) causes the pattern part to deform (warp)
[0011] Therefore, in the prior art, there is a problem that it is difficult to easily and reliably prevent the warp caused by the own weight of the large silicon mask.

Method used

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  • Mask, mask manufacturing method, pattern forming apparatus, and pattern formation method
  • Mask, mask manufacturing method, pattern forming apparatus, and pattern formation method
  • Mask, mask manufacturing method, pattern forming apparatus, and pattern formation method

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Embodiment Construction

[0039] Hereinafter, embodiments of the mask, the method of manufacturing the mask, the film forming apparatus, the light emitting device, and the electronic device of the present invention will be described with reference to the drawings. In addition, in each drawing, in order to make each layer or each member have a recognizable size on the drawing, the scale of each layer or each member is different.

[0040] (mask)

[0041] FIG. 1 is a configuration diagram for explaining a mask of the present invention, FIG. 1( a ) is a cross-sectional perspective view of the mask, and FIG. 1( b ) is a view showing the back surface of the mask.

[0042] The mask M is configured to include: an outer frame portion 10 having an outer shape of the mask M; and a pattern portion 20 having a plurality of mask openings 24 provided inside the outer frame portion 10 . In addition, the outer frame portion 10 is a member formed by directly utilizing the thickness of a silicon wafer.

[0043] The pat...

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Abstract

A mask for forming a thin film having a first pattern against a film formation substrate, including: a nonmagnetic substrate having an aperture corresponding to the first pattern; and a magnetic film having a second pattern and arranged on the nonmagnetic substrate.

Description

technical field [0001] The present invention relates to a mask, a method for manufacturing the mask, a pattern forming device, and a pattern forming method. Background technique [0002] Organic electroluminescence (electroluminescence) (hereinafter referred to as organic EL) device has a self-luminous high-speed response display element with a laminated film structure, so it can easily form an excellent display panel corresponding to moving images, especially in recent years. It is very attractive as a display panel such as FPD (Flat Panel Display) TV. [0003] As a typical manufacturing method, it is known that a transparent anode such as ITO (indium tin oxide) is patterned into a desired shape, and an organic material is laminated into a film on the transparent anode by vapor deposition, and then formed cathode method. [0004] In particular, when manufacturing a full-color organic EL device, it is necessary to vapor-deposit organic materials of each color R, G, and B t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/04C23C14/24H05B33/10H05B33/14G03F1/00H01L51/50
CPCG03F1/20G03F1/14H01L27/3211C23C14/042H10K59/35H05B33/10H10K71/166
Inventor 四谷真一
Owner SEIKO EPSON CORP
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