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Method for controlling chip temperature in reaction chamber for semiconductor etching process

A reaction chamber and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of silicon wafer temperature rise, rise to 80 ℃, silicon wafer etching effect deviating from expected value, etc. The effect of the eclipse effect

Active Publication Date: 2006-10-25
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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AI Technical Summary

Problems solved by technology

[0003] During the process, the temperature of the silicon wafer needs to be kept at 60°C to 70°C, but during the process, the plasma bombards the silicon wafer, causing the temperature of the silicon wafer to rise, up to 80°C, which will cause silicon The effect of chip etching deviates from the expected value

Method used

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  • Method for controlling chip temperature in reaction chamber for semiconductor etching process
  • Method for controlling chip temperature in reaction chamber for semiconductor etching process
  • Method for controlling chip temperature in reaction chamber for semiconductor etching process

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Embodiment Construction

[0021] The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0022] The connection diagram of the computer control equipment of the present invention is as follows figure 1 As shown, in the wafer etching process, the industrial computer 11 is connected to various controlled devices through the CPCI (Compact Peripheral Component Interconnect) block 12, including valve 1, valve 2, valve 3, and pressure controller 4 , thermometer 5, thermostat 6, dry pump 7.

[0023] Such as figure 2 As shown, the electrostatic chuck 9 and the thermometer 5 are placed in the reaction chamber 10, the thermometer 5 can measure the temperature value of the reaction chamber 10 in real time, the temperature controller 6 is placed at the entrance of the reaction chamber 10, and the gas enters the reaction chamber At 10 o'clock, the temperature will be heated to a predetermined value by the thermostat 6.

[0024] Such...

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Abstract

The invention deals with the domain of the semiconductor chiseling and eroding. The invention discloses the method of controlling the temperature of the wafer during the course of chiseling and eroding the semiconductor. The process of the invention is showed below: the corresponding relation between the temperature of the cavity and the temperature controlling machine is gained on the base of the testing, videlicet, when the temperature of the cavity hoists, the corresponding needing of the temperature of the temperature controlling to keep the temperature of the silicon the normal range. These corresponding relations are reserved in one database, during the process, according to the changing of the temperature of the cavity, the database is find to adjust the temperature of the temperature controlling machine real-timely, so the temperature of the silicon is controlled; because of adopting the said technical project, the system can lookup the database real-timely to adjusting the temperature of the temperature of the temperature controlling setting according to the changing of the temperature of the active cavity, so the temperature of the silicon can be controlled above the normal value to improve the effect of the chiseling and the eroding of the wafer.

Description

technical field [0001] The invention relates to the field of semiconductor etching, in particular to a method for controlling the wafer temperature in a reaction chamber in a semiconductor etching process. Background technique [0002] During the silicon wafer etching process, it is necessary to fix the silicon wafer on the electrostatic chuck to maintain the stability of the silicon wafer during the process; at the same time, only when the silicon wafer is fixed on the electrostatic chuck can the temperature of the silicon wafer be controlled. Control, so that the silicon wafer is heated or cooled evenly. The fixing of the silicon wafer is realized by applying positive voltage to the electrostatic chuck; the temperature control of the silicon wafer is realized through the temperature controller on the electrostatic chuck and the flow of gas, which can ensure that the silicon wafer is heated evenly and at the same time The silicon wafer also reaches the target temperature t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F4/04H01L21/3065
Inventor 张京华
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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