Method for controlling chip temperature in reaction chamber for semiconductor etching process

Abstract

The invention relates to the field of semiconductor etching. The invention is a method for controlling the wafer temperature of a reaction chamber in a semiconductor etching process. The method of the invention obtains a correspondence between the chamber temperature and the temperature controller on the basis of experiments. Relationship, that is to record, when the temperature of the chamber rises, the temperature of the thermostat needs to be adjusted correspondingly, so as to keep the temperature of the silicon wafer within the normal value range. Save these corresponding relationships in a database. During the process, according to the change of the chamber temperature, search the database, adjust the temperature of the thermostat in real time, so as to control the temperature of the silicon wafer; due to the above technical scheme, the system can be based on The temperature of the reaction chamber changes, the database is searched in real time, and the temperature of the thermostat is adjusted in real time, thereby controlling the temperature of the silicon wafer at a normal value and improving the etching effect of the wafer.

Description

Technical field [0001] The invention relates to the field of semiconductor etching, in particular to a method for controlling the temperature of a wafer in a reaction chamber in a semiconductor etching process. Background technique [0002] During the silicon wafer etching process, the silicon wafer needs to be fixed on the electrostatic chuck to maintain the stability of the silicon wafer during the process; at the same time, the temperature of the silicon wafer can be achieved only when the silicon wafer is fixed on the electrostatic chuck Control, make the silicon wafer get uniform heating or cooling. The fixing of the silicon wafer is realized by applying a positive voltage to the electrostatic chuck; the temperature control of the silicon wafer is realized by the thermostat on the electrostatic chuck and the flow of gas, which can ensure that the silicon wafer is heated evenly and at the same time The silicon wafer reaches the target temperature the fastest. [0003] During ...

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Problems solved by technology

[0003] During the process, the temperature of the silicon wafer needs to be kept at 60°C to 70°C, but during the process, the plasma bombards the silicon wafer, causing the temperature of the silicon wafer to rise, up to 80°C, which will cause silicon The effect of chip etching deviates from the expected value

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