Bank structure, wiring pattern forming method, device, electro-optical device, and electronic apparatus

Abstract

The present invention provides a bank structure, a method for forming a film pattern, an apparatus, an electro-optical device, and an electronic device in which film thickness differences in wiring patterns having different wiring widths are eliminated. The bank structure of the present invention is a bank structure (1) that divides the pattern forming region (P) where the functional liquid (L) is placed, and the pattern forming region (P) includes a first pattern forming region (55), and the first pattern forming region (55). The first pattern formation region (55) is connected to a second pattern formation region (56) having a smaller width than the first pattern formation region (55). The height of the inner surface (56b) of the bank (34b) dividing the second pattern forming area (56) is lower than the height of the inner surface (55a) of the bank (34a) dividing the first pattern forming area (55).

Description

technical field [0001] The present invention relates to a cofferdam structure, a wiring pattern forming method, a device, an electro-optical device, and an electronic device. Background technique [0002] As a method of forming wiring in a predetermined pattern used in electronic circuits, integrated circuits, etc., for example, photolithography is widely used. This photolithography method requires large-scale facilities such as vacuum equipment and exposure equipment. In addition, in order to form wiring with a predetermined pattern using the above-mentioned device, complicated steps are required, and the material usage efficiency is only about a few percent, and most of them have to be discarded, resulting in a problem of high manufacturing cost. [0003] In view of this, it has been proposed to use a droplet ejection method in which a liquid material is ejected in a droplet form from a liquid ejection head, that is, a so-called inkjet method, to form a wiring or the like...

AI Technical Summary

Problems solved by technology

[0010] However, when reducing the width of a part of the wiring formation region as described above to increase the amount of functional liquid flowing into the fine wiring pattern portion, it is difficult to properly adjust the inflow of the functional liquid. In the wiring formation area, the film thickness of the fine wiring pattern is thicker than that of other wiring patterns, and there is a difference in film thickness between the fine wiring part and other wiring parts.

[0011] In this case, for example, when this technique is applied to the formation of the gate wiring and the gate electrode connected thereto, it is difficult to obtain stable transistor characteristics due to the difference in film thickness between the gate wiring and the gate electrode.

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