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Plane flip-chip LED integrated chip and producing method

An integrated chip and flip-chip technology, which is applied in the field of flat flip-chip LED integrated chips and manufacturing, can solve the problems of poor heat dissipation, difficult multi-chip integration, and high cost, and achieve good heat dissipation, good luminous effect, and low manufacturing cost. Effect

Inactive Publication Date: 2007-01-24
NANKER GUANGZHOU SEMICON MFG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional flip-chip LEDs use larger power LEDs with higher cost. Due to the larger chip area and concentrated heat source, the heat dissipation effect is not good.
At the same time, this kind of flip-chip LED is difficult to achieve multi-chip integration

Method used

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  • Plane flip-chip LED integrated chip and producing method
  • Plane flip-chip LED integrated chip and producing method
  • Plane flip-chip LED integrated chip and producing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Such as figure 1 , figure 2 , Figure 9 As shown, the planar flip-chip LED integrated chip of this embodiment includes nine LED bare chips 1 and a silicon substrate 2, and the LED bare chips 1 include sapphire (Al 2 o 3 ) substrate 10 and gallium nitride (GaN) N-type epitaxial layer 11, P-type epitaxial layer 12, certainly, described substrate 10 also can be the substrate of other materials such as silicon carbide (SiC), described silicon substrate 2 is a P-type silicon substrate, the top surface of the silicon substrate 2 has two separate deposited metal layers 32, 33 at each of the LED bare chips 1, and the metal layers 32, 33 are metal aluminum, of course Metal copper or silicon-aluminum alloy can also be used, and the outer surfaces of the metal layers 32, 33 are reflective surfaces, and the metal layers 32, 33 are not only electrodes, conductors, but also heat sinks for LEDs, or light reflectors for light on the bottom surface. , the back side of the silicon s...

Embodiment 2

[0043] Such as image 3 , Figure 4 , Figure 9 As shown, the difference between this embodiment and Embodiment 1 lies in: the connection mode between each of the LED bare chips 1 through the metal layers 32, 33 - between the LED bare chips 1 of this embodiment are connected in series, that is, all the bare LED chips 1 between the anode contact 80 and the cathode contact 81 are connected in series.

[0044] The remaining features of this embodiment are the same as those of Embodiment 1.

Embodiment 3

[0046] Such as Figure 5 , Image 6 , Figure 9 As shown, the difference between this embodiment and Embodiment 1 lies in: the connection mode between each of the LED bare chips 1 through the metal layers 32, 33 - between the LED bare chips 1 of this embodiment First, every three groups are connected in series, and then the three groups are connected in parallel.

[0047] The remaining features of this embodiment are the same as those of Embodiment 1.

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PUM

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Abstract

This invention discloses a plane flip LED integrated chip and its manufacturing method, in which, said chip includes several LED bare chips and silicon chips, the LED bare chips include a substrate and a N-epitaxial layer, P-epitaxial layer, the silicon substrate top surface has two separated metal layers at each bare chip, the P and the N epitaxial layers are put on the metal layer up-side-down by solder balls, an isolation layer is set in the combined region of the metal layers and the silicon substrate, another isolation layer is set between the metal layers corresponding to the LED bare chips and the silicon substrate, several LED bare chip are connected by the metal layers and lead out an anode connecting point and a cathode connecting point. Said method includes steps of forming an isolation layer, a metal layer, a protection layer and a flip LED.

Description

technical field [0001] The invention relates to a plane flip-chip LED integrated chip and a manufacturing method thereof. Background technique [0002] Flip-chip technology is one of the most advanced microelectronic packaging technologies today. It is not only a chip interconnection technology, but also an ideal chip bonding technology, which raises the circuit assembly density to a new level. Among all surface mount technologies, flip chip can achieve the smallest and thinnest package. As the size of electronic products shrinks further, the application of flip chip will become more and more extensive. The packaging form in which the bare LED chip is buckled upside down on the silicon substrate is called a flip-chip LED. Traditional flip-chip LEDs use larger power LEDs with higher cost. Due to the larger chip area and concentrated heat source, the heat dissipation effect is not good. At the same time, it is difficult to realize multi-chip integrati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/075H01L25/00H01L23/488H01L21/48H01L21/60H01L33/60
CPCF21K9/00H01L25/0753H01L33/60H01L25/167H01L2924/0002H01L2924/00
Inventor 吴纬国
Owner NANKER GUANGZHOU SEMICON MFG