The invention provides microwave-plasma chemical vapor deposition equipment. The microwave-plasma chemical vapor deposition equipment comprises a microwave source, a first waveguide tube, a microwave mode converter and a resonance device, wherein one end of the first waveguide tube is connected with the microwave source, and the other end of the first waveguide tube is connected with the microwave mode converter; the resonance device comprises a resonance cavity and a microwave gathering unit, the top of the resonance cavity is provided with a medium window, the microwave mode converter is located on the upper part of the medium window, can perform mode conversion on microwave from the microwave source, and can transfer the microwave to the resonance cavity through the medium window, a base is arranged in the resonance cavity, a substrate is supported on the base, the supported substrate can be located below the medium window due to the arrangement of the substrate, and the microwave gathering unit is arranged on the resonance cavity and can gather the microwave transferred to the resonance cavity on the substrate. According to the microwave-plasma chemical vapor deposition equipment, through the arrangement of the microwave gathering unit, the distribution area of a microwave electric field on the substrate is expanded, so that microwave energy can be better concentrated on the area above the substrate, and deposition of a large-area diamond film is facilitated.