Microwave-plasma chemical vapor deposition equipment

A technology of chemical vapor deposition and microwave plasma, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as the existence of the preparation process, the low deposition area of ​​deposition equipment, and the difficulty of chamber replacement and maintenance. , to achieve the effect of expanding the distribution area and uniform temperature distribution

Active Publication Date: 2015-06-24
朱雨
View PDF3 Cites 38 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The invention provides a microwave plasma chemical vapor deposition equipment, which is used to solve the technical defects of the prior art, such as relat

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microwave-plasma chemical vapor deposition equipment
  • Microwave-plasma chemical vapor deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings and embodiments of the present invention. Obviously, the described embodiments are the Some, but not all, embodiments are invented. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0036] Such as figure 1 with figure 2As shown, the microwave plasma chemical vapor deposition equipment of the present invention includes a microwave source 1, a first waveguide 2, a microwave mode converter and a resonance device. One end of the first waveguide 2 is connected to the microwave source 1, and the other end is connected to the microwave mode converter; the res...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides microwave-plasma chemical vapor deposition equipment. The microwave-plasma chemical vapor deposition equipment comprises a microwave source, a first waveguide tube, a microwave mode converter and a resonance device, wherein one end of the first waveguide tube is connected with the microwave source, and the other end of the first waveguide tube is connected with the microwave mode converter; the resonance device comprises a resonance cavity and a microwave gathering unit, the top of the resonance cavity is provided with a medium window, the microwave mode converter is located on the upper part of the medium window, can perform mode conversion on microwave from the microwave source, and can transfer the microwave to the resonance cavity through the medium window, a base is arranged in the resonance cavity, a substrate is supported on the base, the supported substrate can be located below the medium window due to the arrangement of the substrate, and the microwave gathering unit is arranged on the resonance cavity and can gather the microwave transferred to the resonance cavity on the substrate. According to the microwave-plasma chemical vapor deposition equipment, through the arrangement of the microwave gathering unit, the distribution area of a microwave electric field on the substrate is expanded, so that microwave energy can be better concentrated on the area above the substrate, and deposition of a large-area diamond film is facilitated.

Description

technical field [0001] The invention relates to a chemical vapor deposition equipment, in particular to a microwave plasma chemical vapor deposition equipment. Background technique [0002] Diamond is a mineral composed of carbon, which has excellent mechanical, thermal, chemical, electrical, acoustic and optical properties such as high hardness, high thermal conductivity, low thermal expansion coefficient, high chemical inertness, and high transmittance. It has extremely broad application prospects in research and industry. Due to the scarcity of natural diamonds and the relative difficulty of artificial preparation, people began to study the synthesis of diamond films under low temperature and low pressure conditions. [0003] At present, a variety of methods for preparing diamond films by chemical vapor deposition have been developed, mainly including hot wire method, flame method, DC arc method, microwave method and so on. The hot wire method has defects such as contam...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/517C23C16/513C23C16/511
Inventor 朱雨王海侠
Owner 朱雨
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products