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Method for forming barrier layer on copper metal without use of electrodeposition

An electroless, metal technology used in circuits, electrical components, semiconductor/solid-state device manufacturing, etc.

Inactive Publication Date: 2007-02-21
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The main purpose of the present invention is to provide a method for plating a cobalt-containing barrier layer such as CoWP or CoWB on the surface of reduced copper metal in an electroless manner to solve the problems of the prior art

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  • Method for forming barrier layer on copper metal without use of electrodeposition
  • Method for forming barrier layer on copper metal without use of electrodeposition
  • Method for forming barrier layer on copper metal without use of electrodeposition

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Embodiment Construction

[0028] see Figure 1 to Figure 4 , which shows a schematic cross-sectional view of the copper metal wire process. According to a preferred embodiment of the present invention, the method for forming the copper wire of the semiconductor element is to deposit an insulating layer 12 such as a low dielectric constant material on the substrate 10, and then etch a wire trench 14 in the insulating layer 12, and then place the wire on the wire A liner layer 16 such as Ta / TaN is formed on the bottom and side walls of the trench 14, and then the conductor trench 14 is filled with a conductive material 18 such as copper, and finally, the excess liner layer 16 and conductive material 18 outside the conductor trench 14 are Chemical mechanical polishing is used to remove from the surface of the insulating layer 12, forming wires embedded in the insulating layer 12 and obtaining a flat surface.

[0029] The aforementioned low dielectric constant materials can be organic low dielectric consta...

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Abstract

The method for forming metal barrier cover layer on substrate without electro deposition includes steps: first, carrying out procedure for forming copper conducting wire on substrate with upper surface of the wire being exposed out; carrying out pre-cleaning procedure for the exposed upper surface; carrying out activating treatment by using activation solution of surface contact on the said exposed upper surface; carrying out annealing procedure in situ for the exposed upper surface in environment of containing steam of ethanol and carrier gas at temperature lower than 400 deg.C; depositing selected metal barrier cover layer on the said exposed upper surface in not plating mode.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for plating a cobalt-containing barrier layer such as CoWP or CoWB on the surface of reduced copper metal by means of electroless plating. Background technique [0002] Copper metal wires have gradually replaced traditional aluminum metal as the main material specification for metal interconnections in the current manufacture of integrated circuit components, because copper metal has advantages such as lower resistivity. At present, it has been proposed to additionally deposit a cobalt-containing barrier layer or barrier cap layer such as CoWP on the copper wire by electroless plating, so as to completely cover the copper wire, and use the tungsten component in CoWP to significantly improve the copper resistance. barrier characteristics. This barrier layer is typically deposited selectively on the surface of the exposed copper metal conductors that have just been...

Claims

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Application Information

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IPC IPC(8): H01L21/768
Inventor 陈树仁许嘉麟
Owner UNITED MICROELECTRONICS CORP