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Method for manufacturing of cmos image sensor

A technology of image sensors and devices, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problem of reducing the characteristics of image sensors

Inactive Publication Date: 2007-04-04
DONGBU ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This disturbance degrades the characteristics of the image sensor

Method used

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  • Method for manufacturing of cmos image sensor
  • Method for manufacturing of cmos image sensor
  • Method for manufacturing of cmos image sensor

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Embodiment Construction

[0031] Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0032] FIG. 4 is a plan view of a CMOS image sensor according to one embodiment of the present invention, and FIG. 5 is a cross-sectional view of the CMOS image sensor of FIG. 4 taken along line V-V'.

[0033] As shown in FIGS. 4 and 5 , the CMOS image sensor according to the present embodiment includes: a plurality of photodiodes 104 formed on a semiconductor substrate 101 separated from each other by a predetermined distance; a device isolation layer 102 formed on the semiconductor substrate 101 Between each photodiode 104 ; a light-blocking layer 108 for shielding light incident to adjacent photodiodes 104 ; and a dielectric layer 109 are formed on the entire surface of the semiconductor substra...

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Abstract

A CMOS image sensor and a method for manufacturing the same are provided. The method includes: forming a device isolation layer on a device isolation region of a semiconductor substrate; forming photodiodes on photodiode regions of the semiconductor substrate; forming a salicide metal layer and a barrier metal layer sequentially on the entire surface of the semiconductor layer; forming a light blocking layer between the photodiodes to block a light incident a photodiode from reaching an adjacent photodiode by selectively removing the salicide metal layer and the barrier metal layer that have not reacted during a silicide process; and forming a dielectric layer on the entire surface of the semiconductor substrate having the light blocking layer.

Description

technical field [0001] The present invention relates to complementary metal oxide semiconductor (CMOS) image sensors, and more particularly, to CMOS image sensors for preventing interference by preventing light from being incident on adjacent pixels. Background technique [0002] Image sensors are semiconductor devices that convert optical images into electrical signals. Image sensors are generally classified into charge-coupled devices (CCDs) and CMOS image sensors. [0003] CMOS image sensors are classified into 3T type, 4T type, and 5T type according to the number of transistors. The 3T type image sensor includes a single photodiode and three transistors, and the 4T type CMOS image sensor includes a single photodiode and four transistors. [0004] Hereinafter, the 3T CMOS image sensor will be described with reference to its equivalent circuit diagram and its layout. [0005] FIG. 1 is an equivalent circuit diagram of a 3T CMOS image sensor according to the related art....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/822H01L27/146
CPCH01L27/1463H01L27/14623H01L27/146
Inventor 全寅均
Owner DONGBU ELECTRONICS CO LTD