Wet process device for etching wafer, and wet process etching method

A wet etching, wafer technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of uneven etching on the wafer surface, affecting product yield, reducing process accuracy, etc.
CN1959938BInactive Publication Date: 2010-09-29MACRONIX INT CO LTD

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
MACRONIX INT CO LTD
Publication Date
2010-09-29
Estimated Expiration
Not applicable Β· inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention is related to wet-process etching device for wafer, and wet-process etching method. The method includes following steps: first, placing a wafer to an etching fluid; then, rotating wafer in etching fluid.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a wafer wet etching device and a wet etching method thereof, in particular to a wafer wet etching device and a wet etching method for rotating a wafer in etching liquid. Background technique

[0002] Electronic products are changing with each passing day. Along with the increasing demand for semiconductor chips, the rapid development of semiconductor technology has been driven. In order to reduce the volume occupied by the chip, the line width in the chip is continuously reduced. Therefore, the semiconductor process capability is severely tested, and the control of process accuracy and process variation is more important. Especially taking the wet etching process in the semiconductor process as an example, the variation of etching depth will greatly affect the yield rate of chip products.

[0003] A conventional wafer wet etching method is to immerse a wafer in a wet etching solution, and the wet etching solution can perform ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More