Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polymer light-emitting-diode making method

A technology of light-emitting diodes and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of low luminous purity of polymer light-emitting diodes, and achieve the effect of improving luminous purity

Inactive Publication Date: 2007-06-13
INNOCOM TECH SHENZHEN +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to solve the problem of low luminous purity of the polymer light-emitting diodes obtained by the prior art polymer light-emitting diode manufacturing method, it is necessary to provide a polymer light-emitting diode manufacturing method that can manufacture polymer light-emitting diodes with higher luminous purity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polymer light-emitting-diode making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] Please refer to FIG. 2 , which is a flow chart of a preferred embodiment of the manufacturing method of the polymer light emitting diode of the present invention. The manufacturing method of the polymer light-emitting diode comprises the following steps: providing a base; forming an anode layer on the base; forming a polymer light-emitting layer on the anode layer; ultrasonically treating the polymer light-emitting layer; baking the polymer light-emitting layer ; Sealing the polymer light-emitting layer. details as follows:

[0014] (1) Provide a base

[0015] The substrate acts as a carrier for other components, and its material is usually glass, organic film or plastic.

[0016] (2) Forming the anode layer

[0017] The anode layer is formed on the substrate. The anode layer may be a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a thin metal conductive film through which light can pass. The anode layer can be formed...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The method for fabricating high molecular light emitting diode (LED) includes steps: providing a base plate; forming an anode layer on the base plate; forming a high molecular luminous layer on the anode layer; using ultrasonic to process the high molecular luminous layer. The method can produce high molecular LED with higher purity of luminescence.

Description

【Technical field】 [0001] The invention relates to a method for manufacturing a polymer light-emitting diode. 【Background technique】 [0002] With the rapid development of science and technology, people's requirements for display devices are also increasing day by day, making the display devices develop in a direction of being lighter, thinner, and more power-saving, and thus organic light-emitting diode displays are produced. Compared with liquid crystal displays, organic light-emitting diode displays are self-illuminating displays, and do not require a backlight module with high energy consumption, so they can be lighter, thinner, and more power-saving. [0003] According to the different organic thin film materials used, organic light emitting diodes can be divided into small molecule light emitting diodes and polymer light emitting diodes. [0004] Organic light-emitting diodes usually include a multi-layer film structure such as an electron injection layer, an electron ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56
Inventor 黄荣龙彭家鹏
Owner INNOCOM TECH SHENZHEN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com