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Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information

a technology of optical information and recording medium, which is applied in the direction of optical recording/reproducing/erasing methods, instruments, corona discharge, etc., can solve the problems of readout errors, phase change optical recording medium, and higher error rate of recording signals, and achieve excellent weather resistance, reproducible effect of optical information recording medium, and excellent characteristics of repetitive recording

Inactive Publication Date: 2005-04-28
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides an optical information recording medium that has good durability against weather conditions and can be repeatedly recorded on without losing its quality. This is achieved through the use of a recording layer which changes its properties when exposed to light or other forms of energy, and a special layer made of a specific material called germanium (Ge) containing certain elements such as niobium (Nb), silicon (Si), aluminum (Al), etc. This layers are deposited onto a substrate using a process known as reactive sputtering, resulting in efficient production of high-quality optical media suitable for various applications.

Problems solved by technology

Technologies described involve improving the durability and reliability of data storage devices made up of layers called protection layers. These technical means include reducing defects during production processes, increasing the number of repetitions per unit time, controlling the formation process conditions, optimizing the materials themselves, minimizing changes caused by environmental factors, maintaining stable properties through modification techniques, and ensuring proper functioning of these devices.

Method used

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  • Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information
  • Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information
  • Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0220] The optical disks having the layer structure shown in FIGS. 3A and 3B (a disk (1) and a disk (3) in a table 4) are made on a experimental basis. The recording layer 3 comprises a phase change material whose main component is a Ge2Sb2.3Te5 alloy, and the dielectric protective layers 2 and 4 comprises a ZnS—SiO2 film. When the film is formed, the gas is supplied in such a manner that each total pressure of the Ar gas becomes 1.0 mTorr and 0.5 mTorr, respectively, and each of the powers DC1.27 W / cm2 and RF6.37 W / cm2 is introduced into the negative electrode 55, respectively. Furthermore, when the reflecting layer (AlCr) 5 is formed, the Ar gas is supplied in such a manner that the total pressure becomes 3.0 mTorr, thereby the power DC 4.45 W / cm2 is introduced.

[0221] In the disk (1), after the dielectric protective layer is formed, sequentially, the barrier layer 8 is formed. In the disk (3), after the recording layer 3 is formed, sequentially, the barrier layer 8 is formed. In ...

example 2

[0225] All the protective layers at the substrate side of the disk (1) in Table 4 in the example 1 are changed to the Ge—N layer or the Ge—N—O layer, thereby a disk (5) is formed (accordingly, the Ge—N protective layer or the Ge—N—O protective layer whose thickness is 91 nm is formed at the substrate side of the recording layer). Furthermore, all the protective layers at the reflecting layer side of the disk (3) in Table 4 are changed to the Ge—N layer or the Ge—N—O layer, thereby a disk (6) is formed (accordingly, the Ge—N protective layer or the Ge—N—O protective layer whose thickness is 25.2 nm is formed at the reflecting layer side of the recording layer). The repeating characteristic of disks (5) and (6) is examined by the same method as the example 1. Both of them can similarly obtain the result ⊚. That is, the Ge—N layer or the Ge—N—O layer can be formed in such a manner that the Ge—N layer or the Ge—N—O layer can obtain a thickness necessary for the protective layer. Further...

example 3

[0226] Next, the recording layer 3 comprises a phase change material whose main component is a Ge2Sb2.3Te5 alloy, when the barrier layer 8 is formed, Sb is used as the target, and the mixture of Ar and nitrogen is used as the sputter gas. On the above condition, the films comprising the structure shown in FIGS. 3A and 3B are formed (a disk (2), a disk (4)). In this case, the film thickness of each layer is same as the thickness in the above case that Ge is used as the target. The spatter gas pressure of the barrier layer 8 is 20 mTorr, and the partial pressure ratio of Ar to nitrogen in the sputter gas is 3 to 1. In this case, the result of the repeating characteristic is shown in disk numbers (2) and (4) in Table 4.

[0227] According to Table 4, compared to the case that Ge is used as the target so that the film is formed, although the number of repeatable times is inferior, better repeating characteristic can be obtained than the comparative example.

TABLE 4Result 3 of comparing t...

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Abstract

The present invention provides an optical information medium having excellent weather resistance and repeating characteristics. The optical information medium has a barrier layer between a protective layer and a recording layer. The barrier layer includes GeN or GeON, and at least one element selected from the group consisting of Al, B, Ba, Bi, C, Ca, Ce, Cr, Dy, Eu, Ga, H, In, K, La, Mn, N, Nb, Ni, Pb, Pd, S, Si, Sb, Sn, Ta, T, Ti, W, Yb, Zn and Zr.

Description

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Claims

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Application Information

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Owner PANASONIC CORP
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