Wafer heater assembly

Abstract

A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon ‘wire’ or ‘braided’ structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.

Description

FIELD OF THE INVENTION [0001] The invention relates to a substrate holder, and more particularly to a single wafer heater assembly in a substrate holder having low thermal mass and a fast response time. BACKGROUND OF THE INVENTION [0002] As semiconductor manufacturing technology progresses, the diameter of a semiconductor wafer has increased providing a larger number of semiconductor circuits to meet the higher demand for improvement in the yield rate in order to reduce costs. In order to provide a better yield, improved temperature control is often required. [0003] During semiconductor processing, a substrate holder can be used to control the wafer / substrate temperature. In single wafer processing, single piece resistive heaters are used, and they are difficult to control. Problems with conventional single wafer heater systems include: potential for metal contamination from components; limited thermally independent zones, (limited by heater / susceptor thermal stress fracture conside...

AI Technical Summary

Benefits of technology

[0006] The invention provides a substrate holder that comprises a heating unit with a more uniform heating characteristic and faster response time. In one aspect of the invention, a unique heater element has been developed that comprises a high purity carbon wire encased in quartz. The heater elements are designed to emit electromagnetic radiation similar to conventional metal-wire heater elements, and the heater elements have low thermal mass for rapid thermal transitioning.

[0007

Problems solved by technology

In single wafer processing, single piece resistive heaters are used, and they are difficult to control.

Problems with conventional single wafer heater systems include: potential for metal contamination from components; limited thermally independent zones, (limi

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