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Wafer heater assembly

a wafer heater and assembly technology, applied in the field of single wafer heater assembly, can solve the problems of limited thermally independent zones, difficult control, and potential metal contamination of components, and achieve the effects of uniform heating characteristics, low thermal mass, and fast response tim

Inactive Publication Date: 2005-10-06
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0006] The invention provides a substrate holder that comprises a heating unit with a more uniform heating characteristic and faster response time. In one aspect of the invention, a unique heater element has been developed that comprises a high purity carbon wire encased in quartz. The heater elements are designed to emit electromagnetic radiation similar to conventional metal-wire heater elements, and the heater elements have low thermal mass for rapid thermal transitioning.
[0007

Problems solved by technology

In single wafer processing, single piece resistive heaters are used, and they are difficult to control.
Problems with conventional single wafer heater systems include: potential for metal contamination from components; limited thermally independent zones, (limi

Method used

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Embodiment Construction

[0027] In material processing systems, substrates and / or wafers are positioned on holders, such as chucks, that include heating and / or cooling elements. In one embodiment of the invention, an improved holder is provided that includes a unique heater element that comprises a high purity carbon wire encased in quartz.

[0028]FIG. 1 illustrates an exemplary block diagram of a processing system according to an embodiment of the invention. For example, processing system 100 can include an etch system, such as a plasma etcher. Alternately, processing system 100 can include a photoresist coating system, a patterning system, a development system, and / or combinations thereof. In other embodiments, processing system 100 can include a thermal processing system such as a rapid thermal processing (RTP) system, a coating system, a chemical vapor deposition (CVD) system, a physical vapor deposition (PVD, iPVD) system, a atomic layer deposition (ALD) system, and / or combinations thereof.

[0029] Proce...

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Abstract

A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon ‘wire’ or ‘braided’ structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.

Description

FIELD OF THE INVENTION [0001] The invention relates to a substrate holder, and more particularly to a single wafer heater assembly in a substrate holder having low thermal mass and a fast response time. BACKGROUND OF THE INVENTION [0002] As semiconductor manufacturing technology progresses, the diameter of a semiconductor wafer has increased providing a larger number of semiconductor circuits to meet the higher demand for improvement in the yield rate in order to reduce costs. In order to provide a better yield, improved temperature control is often required. [0003] During semiconductor processing, a substrate holder can be used to control the wafer / substrate temperature. In single wafer processing, single piece resistive heaters are used, and they are difficult to control. Problems with conventional single wafer heater systems include: potential for metal contamination from components; limited thermally independent zones, (limited by heater / susceptor thermal stress fracture conside...

Claims

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Application Information

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IPC IPC(8): C23F1/00H01L21/00
CPCH01L21/67109H01J2237/2001H01L21/683H01L21/687H01L21/00
Inventor O'MEARA, DAVID L.LEUSINK, GERRIT J.CABRAL, STEPHEN H.DIP, ANTHONYWAJDA, CORYJOE, RAYMOND
Owner TOKYO ELECTRON LTD
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