Determination of thin film topograhpy

a thin film topography and topography technology, applied in the direction of measuring devices, instruments, using optical means, etc., can solve the problem that current thin film measurement methods do not possess such a universal appeal, and achieve the effect of improving accuracy
US20050237537A1Inactive Publication Date: 2005-10-27TECHNION RES & DEV FOUND LTD
13 Cites 61 Cited by

Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
TECHNION RES & DEV FOUND LTD
Publication Date
2005-10-27
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A method and apparatus for determining the topography of a thin film having a front surface and a back surface. The method comprises: irradiating the film with an incident coherent or partially coherent beam so as to get two reflected beams, the first reflected from the front surface, and the second from the back surface; and using a third reference beam originating from the incident beam, and substantially parallel to the two reflected beams, wherein the third reference beam acquires a controlled phase shift. The three said beams are used to create an interferometric image of the film, whereby the interference of the three beams allows acquisition of information on the topography of the film that cannot be acquired using the two reflected beams alone.
Need to check novelty before this filing date? Find Prior Art

Description

FIELD OF THE INVENTION

[0001] The present invention relates to determining the topography of thin films. BACKGROUND OF THE INVENTION

[0002] The non-destructive nature of optical methods makes them very important tools in investigating thin films. Several interferometric and ellipsometric tools are widely used for thin film thickness measurement in industry and basic science (on ellipsometry see, for example: M. Steinberg et al, A New Method for Measurement on Surfaces and

[0003] Surface Layers, Mater. Sci. and Eng., 1980, 42, 65-69. D. Beaglehole, H. K. Christenson, “Vapour adsorption on mica and silicon-entropy effects, layering and surface forces”, J.Phys.Chem.,96, 3395-3403, (1992). D. Beaglehole, “Performance of a microscopic imaging ellipsometer”, Rev.Sci.Instrum.,59,2557,(1998)). The typical thickness of films in microelectronics varies in the range of 0÷10 μm. The development of faster microelectronic devices demands development of very thin film technology and therefore new ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More