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Method of hydrogenating a poly-silicon layer

a polysilicon and polysilicon layer technology, applied in the direction of coatings, semiconductor devices, chemical vapor deposition coatings, etc., can solve the problems of difficult control of the whole process of manufacturing tft display, and increasing the manufacturing cost of tft display, so as to improve the characteristics of a polysilicon tft and promote the hydrogenation efficiency of the polysilicon layer

Inactive Publication Date: 2006-05-04
INNOLUX CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

For the present, the manufacturing of the LTPS TFT display does not have a satisfactory yield, which is limited by the poor stability of the annealing process with a laser.
However, the whole process of manufacturing the TFT display is hard to control and needs a lengthy process time.
However, both of the two-hydrogenation technologies need a long time to complete and thus increase the manufacturing costs of the TFT display.

Method used

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  • Method of hydrogenating a poly-silicon layer
  • Method of hydrogenating a poly-silicon layer

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Embodiment Construction

[0012] The method of manufacturing a silicon oxide thin film according to the present invention may be used to improve characteristics of a poly-silicon transistor. Referring to FIG. 1, FIG. 1 is a flow chart of a process of an embodiment according to the present invention. First, providing a substrate having a poly-silicon layer thereon (step 110); surface treating the poly-silicon layer of the substrate with the hydrogen-containing plasma so as to introduce hydrogen into the poly-silicon layer (step 120); depositing a hydrogen-containing silicon-based compound on the poly-silicon layer (step 130); and conducting a thermal treating on the hydrogen-containing silicon-based compound (step 140) to make the hydrogen atoms in the hydrogen-containing silicon-based compound diffuse into the poly-silicon layer.

[0013] Specifically, the hydrogen-containing silicon-based compound is a hydrogen-containing silicon nitride (SiNX:H). In step 120, a plasma exciter does the exciting of hydrogen co...

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Abstract

A method of hydrogenating a poly-silicon layer is disclosed, which is used to improve characteristics of a thin film transistor (TFT) having a poly-silicon thin film. In the method, the poly-silicon layer is first subject to a plasma pre-process and then a hydrogenating process is undertaken thereon where a hydrogen-containing silicon-based compound is deposited over the poly-silicon layer having being pre-processed by the plasma and thermal treated. As such, the hydrogen atoms in the hydrogen-containing silicon-based compound may diffuse into the poly-silicon layer and the hydrogen atoms at a surface of the poly-silicon layer may further diffuse into where need to be filled to promote the hydrogenation effect of the poly-silicon layer, i.e., the hydrogenation may be completed in a shorter time.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of Invention [0002] The present invention relates to a method of improving characteristics of a thin film transistor (TFT), and particularly to a method of hydrogenating a poly-silicon layer. [0003] 2. Related Art [0004] Low temperature poly-silicon (LTPS) technology is used to manufacture a thin film transistor (TFT) display of the new generation. Compared to the conventional amorphous silicon (a-Si) TFT, the LTPS display has a main difference in manufacturing: the LTPS display must have an anneal process where an a-Si thin film is transformed into a poly-silicon layer. With the annealing process, the mobility of carriers of the TFT may be increased up to 200 times. Further, the TFT has the advantages of high response speed, high luminance and high resolution. Therefore, the LPTS technology is considered as an indispensable technology for manufacturing the new-generation TFT display. [0005] For the present, the manufacturing of the LTPS T...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/322
CPCH01L21/3003H01L29/6675
Inventor LIN, FRANK
Owner INNOLUX CORP