Semiconductor processing methods

Abstract

In one aspect, the invention encompasses a semiconductor processing method. A layer of material is formed over a semiconductive wafer substrate. Some portions of the layer are exposed to energy while other portions are not exposed. The exposure to energy alters physical properties of the exposed portions relative to the unexposed portions. After the portions are exposed, the exposed and unexposed portions of the layer are subjected to common conditions. The common conditions are effective to remove the material and comprise a rate of removal that is influenced by the altered physical properties of the layer. The common conditions remove either the exposed or unexposed portions faster than the other of the exposed and unexposed portions. After the selective removal of the exposed or unexposed portions, and while the other of the exposed and unexposed portions remains over the substrate, the wafer is cut into separated die. In another aspect, the invention encompasses another semiconductor processing method. A layer of (CH3)ySi(OH)4-y is formed over a substrate. Some portions of the layer are exposed to ultraviolet light while other portions are not exposed. The exposure to ultraviolet light converts the exposed portions to (CH3)xSiO2-x. After the exposure to ultraviolet light, the exposed and unexposed portions of the layer are subjected to hydrofluoric acid to selectively remove the (CH3)ySi(OH)4-y of the unexposed portions relative to the (CH3)xSiO2-x of the exposed portions.

Description

TECHNICAL FIELD [0001] The invention pertains to semiconductor processing methods, and particularly pertains to methods of removing some portions of a layer from over a semiconductive substrate, while leaving other portions of the layer remaining over the substrate. BACKGROUND OF THE INVENTION [0002] Modern semiconductor processing frequently involves photolithographic methods to pattern materials into very small structures, which are ultimately incorporated into a semiconductor circuit. An exemplary prior art method for forming small structures from a layer of material is as follows. First, the layer of material is provided over a semiconductive substrate. Subsequently, a layer of photoresist is provided over the layer of material. A photolithographic mask is then provided over the layer of photoresist and light is shined through the mask to expose portions of the layer of photoresist while leaving other portions unexposed. The photoresist typically comprises an unsaturated organic...

AI Technical Summary

Benefits of technology

[0007] In one aspect, the invention encompasses a semiconductor processing method wherein a layer of material is formed over a semiconductive wafer substrate. Some portions of the layer are exposed to energy while other portions are not exposed. The exposure to energy alters physical properties of the exposed portions relative to the unexposed portions. After the portions are exposed, the exposed and unexposed portions of the layer are subjected to common conditions. The common conditions are effective to remove the material and comprise a rate of removal that is influenced by the altered physical properties of the layer. The common conditions remove either the exposed or unexposed portions faster than the other of the exposed and unexposed portions. After the selective removal of the exposed o

Problems solved by technology

Among the reasons for removal of the photoresist is that the photoresist is not a material suitable for incorporation into semiconductor circuits.

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