Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

a high-density, ferroelectric technology, applied in the direction of ferroelectric carrier recording, record information storage, instruments, etc., can solve the problem of limiting the minimal domain size that can be achieved

Inactive Publication Date: 2007-11-29
UT BATTELLE LLC
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In any event, these long range interactions limit the minimal domain size that can be achieved during a switching operation performed with the AFM tip.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultrahigh density ferroelectric storage and lithography by high order ferroic switching
  • Ultrahigh density ferroelectric storage and lithography by high order ferroic switching
  • Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Turning now to the drawings in greater detail and considering first FIG. 1, there is illustrated a schematic representation of a ferroelectric structure, generally indicated 20, embodying a ferroelectric material whose direction of polarization can be switched with a cantilevered Atomic Force Microsocopy (AFM) tip 22 which is mounted for movement toward and away from the surface, indicated 21, of the ferroelectric structure 20 in accordance with known techniques. In this connection, the ferroelectric structure 20 includes a suitable conductive substrate 24 (e.g. silicon, germanium platinized silicon or non-ferroelectric oxide) and a thin film layer 26 of ferroelectric material which has been built up upon the substrate 24.

[0028] The material of the ferroelectric layer 26 can be any of a number of known ferroelectric materials, such as an oxide perovskite or a ferroelectric polymer. In any event, however, the polarization of the ferroelectric layer 26 (before the tip 22, when...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
ferroelectric domain sizeaaaaaaaaaa
ferroelectricaaaaaaaaaa
polarityaaaaaaaaaa
Login to View More

Abstract

A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

Description

[0001] This invention was made with Government support under Contract No. DE-AC05-000R22725 awarded by the U.S. Department of Energy to UT-Battelle, LLC, and the Government has certain rights in the invention.BACKGROUND OF THE INVENTION [0002] This invention relates generally to the switching of polarization in a ferroelectric structure and relates, more particularly, to the switching of the direction of polarization in a thin-film ferroelectric structure by way of an electrically-chargeable conducting tip that can also exert local force. [0003] The polarization of ferroelectric material in a thin film ferroelectric structure can be switched with the cantilevered and conductive tip of an Atomic Force Microscopy (AFM) instrument by electrically charging the tip and then moving the tip into contact with the surface of the ferroelectric structure. Such action exemplifies a technique for switching a direction of polarization of ferroelectric material in a ferroelectric data storage devi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): G02B6/00
CPCG11B11/002G11B9/02
Inventor KALININ, SERGEI V.BADDORF, ARTHUR P.LEE, HO NYUNGSHIN, JUNSOOGRUVERMAN, ALEXEI L.KARAPETIAN, EDGARKACHANOV, MARK
Owner UT BATTELLE LLC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com