Method for Resist Strip in Presence of Low K Dielectric Material and Apparatus for Performing the Same

Abstract

A method and apparatus is provided for using a plasma generated from a processing gas mixture including H2O to efficiently strip photoresist material without causing significant damage to exposed, underlying low k dielectric material. The method includes disposing the processing gas mixture including the H2O over the wafer. The processing gas mixture including the H2O is then transformed into a plasma. The plasma serves to remove the photoresist material from the substrate without adversely affecting the exposed low k dielectric material.

Description

CLAIM OF PRIORITY[0001]This application is a divisional application of U.S. patent application Ser. No. 10 / 916,685, filed on Aug. 11, 2004, the disclosure of which is incorporated in its entirety herein by reference.CROSS REFERENCE TO RELATED APPLICATIONS[0002]This application is related to U.S. patent application Ser. No. 10 / 232,635, filed on Aug. 30, 2002, and entitled “H2O Vapor as a Processing Gas for Crust, Resist, and Residue Removal for Post Ion Implant Resist Strip.” The disclosure of this related application is incorporated herein by reference.BACKGROUND OF THE INVENTION[0003]1. Field of the Invention[0004]The present invention relates to semiconductor fabrication.[0005]2. Description of the Related Art[0006]During semiconductor fabrication, integrated circuits are created on a semiconductor wafer (“wafer”) composed of a material such as silicon. To create the integrated circuits on the wafer, it is necessary to fabricate a large number (e.g., millions) of electronic device...

AI Technical Summary

Benefits of technology

The H2O vapor plasma process effectively removes photoresist materials and residues while minimizing damage to low k dielectric materials, maintaining the low k property and reducing capital costs associated with safety features and reagent usage, with a photoresist stripping rate of up to 20000 Å / min and minimal loss of low k dielectric material.

Problems solved by technology

It is important to completely remove the photoresist material during the photoresist stripping process because photoresist material remaining on the wafer surface may cause defects in the integrated circuits.

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