Band Engineered Semiconductor Device and Method for Manufacturing Thereof

Abstract

The disclosure is related to a band engineered semiconductor device comprising a substrate, a protruding structure that is formed in a recess in the substrate and is extending above the recess having a buried portion and an extended portion, and wherein at least the extended portion comprises a semiconductor material having an inverted ‘V’ band gap profile with a band gap value increasing gradually from a first value at lateral edges of the structure to a second value, higher than the first value, in a center of the structure. The disclosure is also related to the method of manufacturing of such band engineered semiconductor device.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]Pursuant to the provisions of 35 U.S.C. §119(e), this application claims priority to U.S. Provisional Patent Application Ser. No. 61 / 701,452, which was filed Sep. 14, 2012, the entire contents of which are incorporated herein by reference.FIELD OF THE DISCLOSURE[0002]The present invention is related to a band engineered semiconductor device, more specifically with a FinFET device and the method of manufacturing thereof.BACKGROUND OF THE DISCLOSURE[0003]Continued scaling of planar MOSFET transistors give rise to increased short channel effects. This has sparked interest in alternative transistor architectures, such as Silicon-On-Insulator FETs, Quantum Well (QW)-based FETs (such as e.g. the implant free quantum well IFQW pFET) and multi-gate FETs (MUGFETs or FinFETs).[0004]However there is further need to improve the performance of the new transistor architectures with respect to the short channel control in order to reduce the OFF-state l...

AI Technical Summary

Benefits of technology

The patent is about a semiconductor device with a protruding structure that has an inverted "V" band gap profile with a gradually increasing value from the lateral edges of the structure to the center. The protruding structure is formed in a recess in the substrate and is made of semiconductor material with a graded concentration of dopants. The device can also have a capping layer made of silicon germanium or silicon oxide. The method for manufacturing the device involves forming the recess, growing epitaxial semiconductor material in the recess, and recessing back the dielectric material in the dielectric region to expose the extended portion of the protruding structure. The semiconductor material can also contain dopants. The technical effect of this patent is to provide a semiconductor device with a protruding structure that has an inverted "V" band gap profile and a graded concentration of dopants, which can enhance the device's performance and stability.

Problems solved by technology

Continued scaling of planar MOSFET transistors give rise to increased short channel effects.

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