Methods for chemical reaction perforation of atomically thin materials
a technology perforations, which is applied in the field of chemical reaction perforation of atomic thin materials, can solve the problems of large molecules with dimensions larger than holes that cannot pass through the layer, difficult control of oxidation process, and preponderance of holes created
Inactive Publication Date: 2014-09-18
LOCKHEED MARTIN CORP
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Benefits of technology
This patent describes two methods for creating holes in very thin materials. The first method involves using a chemical reaction to perforate the material, while the second method involves using cutter molecules to precisely create holes in a lattice structure. These methods can be useful for creating precise structures with holes in them, which can be useful in a variety of fields such as electronics or optics.
Problems solved by technology
Molecules with dimensions larger than the holes will not be able pass through the layer.
It is difficult to control the oxidation process to simultaneously keep hole dimensions small (nanoscopic) and the hole distribution narrow.
The above-mentioned methodologies create nanometer sized holes in graphene, but the preponderance of holes created are not in the size range (below 10 nm diameter) required for applications such as desalination.
Although the above methodologies are adequate at forming a desired size of hole, several of those methods do not consistently provide the same size holes.
In applications based on filtration size sieving this wide of a variation in hole diameter can be unacceptable as the membrane will be unable to discriminate between molecules that are desired and molecules that are not desired.
Method used
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[0021]Generally, the present invention uses a carrier molecule with reactive substituents on its periphery to “cut” the molecular bonds in an atomically thin lattice, layer or membrane, thereby removing a piece of the lattice and leaving behind a hole. In an embodiment where the atomically thin material is graphene, the carrier molecule cuts the carbon-carbon bonds of the lattice or membrane. The hole geometry (shape, size) is defined by the shape and size of the carrier molecule. The reactive substituents on the carrier molecule enable cleavage of molecular bonds, thereby breaking neighboring bonds holding a portion of lattice structure. When that portion leaves, the hole left has a size / shape defined by the size / shape of the carrier molecule. When this chemistry is being done with pure cutter molecules, all the holes so formed are believed to be of exactly the same size. As a result, a “monodisperse” hole-size distribution is created in the atomically thin material such as in one ...
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A method for forming a lattice with precisely sized holes includes disposing cutter molecules with species attached about the periphery of each molecule on to the lattice. The method continues with the species cutting molecular bonds of the lattice so as to form precisely sized holes in the lattice. The edges of the holes may then be functionalized.
Description
CROSS REFERENCE TO RELATED APPLICATION[0001]This application claims priority of Provisional application Ser. No. 61 / 782,124 filed Mar. 14, 2013 and which is incorporated herein by reference.TECHNICAL FIELD[0002]The present invention is generally directed to the formation of perforations in atomically thin materials. More particularly, the present invention relates to a method of chemically cleaving an opening in an atomically thin material such as graphene so as to provide precisely sized apertures in the nanometer range.BACKGROUND ART[0003]The ability to manipulate individual atoms for use in nanotechnology components continues to develop. Some of these developments are in the field of materials and specifically atomically thin materials which may use a single molecular component or selected combinations of molecular components. One example of such a material is graphene which is a two-dimensional aromatic polymer that has a multitude of applications ranging from electronic memory,...
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Login to View More IPC IPC(8): B01D67/00
CPCB01D67/0053B01D67/006B01D71/021C01B32/184C01B32/194B82Y40/00H01L29/1606B01D65/108B01D71/0211
Inventor SINTON, STEVEN W.BEDWORTH, PETER V.
Owner LOCKHEED MARTIN CORP